MBC13900NT1 Freescale Semiconductor, MBC13900NT1 Datasheet - Page 4
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MBC13900NT1
Manufacturer Part Number
MBC13900NT1
Description
TRANS RF NPN LO NOISE SOT-343
Manufacturer
Freescale Semiconductor
Datasheet
1.MBC13900T1.pdf
(24 pages)
Specifications of MBC13900NT1
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
6.5V
Frequency - Transition
15GHz
Noise Figure (db Typ @ F)
0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz
Gain
15dB ~ 22dB
Power - Max
188mW
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 5mA, 2V
Current - Collector (ic) (max)
20mA
Mounting Type
Surface Mount
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBC13900NT1
Manufacturer:
ON/安森美
Quantity:
20 000
Typical Performance Characteristics
4
4
Output Third Order Intercept [Note 3]
Note: 1. Pulse width ≤300 µs, duty cycle ≤2% pulsed.
2.
3.
(V
(V
(V
(V
MAG
Typical Performance Characteristics
CE
CE
CE
CE
Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:
Z
= 2.0 V, I
= 2.0 V, I
= 3.0 V, I
= 3.0 V, I
in
=
and Z
S 21
---------- K
S 12
out
⎛
⎝
C
C
C
C
= 5.0 mA, f = 0.9 GHz)
= 5.0 mA, f = 1.9 GHz)
= 3.0 mA, f = 0.9 GHz)
= 3.0 mA, f = 1.9 GHz)
±
matched for optimum IP3.
Characteristic
K
2
Figure 3. h
–
1
⎞
⎠
, if K > 1,
Table 4. Electrical Characteristics (continued)
0.35
0.25
0.15
0.05
162
160
158
156
154
152
150
148
0.3
0.2
0.1
0
0
0
Figure 2. Capacitance versus Voltage
FE
MBC13900 Technical Data, Rev. 1.1
2.0
, DC Current Gain versus Collector Current
MSG
0.5
4.0
=
C
1.0
C
I
ob
cb
C
, COLLECTOR CURRENT (mA)
6.0
V
S 21
----------
S 12
CB
, REVERSE VOLTAGE (V)
1.5
8.0
, if K < 1
2.0
10
Symbol
OIP3
12
2.5
14
3.0
f = 1.0 MHz
16
Min
-
-
-
-
3.5
2.0 V
3.0 V
18
4.0
20
13.5
Typ
18
21
19
Freescale Semiconductor
Max
-
-
-
-
dBm
Unit