BF 775 E6327 Infineon Technologies, BF 775 E6327 Datasheet - Page 3

• Manufacturer Part Number: BF 775 E6327
• Description: TRANSISTOR RF NPN 15V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BF 775 E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
• Gain: 10.5dB ~ 16dB
• Power - Max: 280mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 15mA, 8V
• Current - Collector (ic) (max): 45mA
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 5 GHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Continuous Collector Current: 0.03 A
• Power Dissipation: 280 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF775E6327XT; SP000010972

Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
f = 900 MHz
f = 1.8 GHz
Power gain, maximum available
I
Z
f = 1.8 GHz
Transducer gain
I
f = 900 MHz
f = 1.8 GHz
1
C
C
C
C
G
L
CB
CE
EB
ma
= 15 mA, V
= 2 mA, V
= 15 mA, V
= 15 mA, V
= Z
= 0.5 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= |S
Lopt
21
, f = 900 MHz
/S
12
CE
CE
CE
CE
| (k-(k
= 6 V, Z
= 8 V, f = 500 MHz
= 8 V, Z
= 8 V, Z
2
-1)
1/2
S
)
BE
BE
S
S
CB
= Z
= Z
= Z
= 0 ,
= 0 ,
= 0 ,
Sopt
Sopt
L
A
= 50 ,
1)
,
= 25°C, unless otherwise specified
,
3
Symbol
f
C
C
C
F
G
|S
T
cb
ce
eb
ma
21e
|
2
min.
3.5
-
-
-
-
-
-
-
-
-
Values
10.5
0.39
0.23
0.64
typ.
1.4
7.5
13
16
5
2
max.
0.55
2007-04-20
-
-
-
-
-
-
-
-
-
BF775
Unit
GHz
pF
dB
dB