BFG 235 E6327 Infineon Technologies, BFG 235 E6327 Datasheet
BFG 235 E6327
Specifications of BFG 235 E6327
SP000010996
Related parts for BFG 235 E6327
BFG 235 E6327 Summary of contents
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NPN Silicon RF Transistor* For low-distortion broadband output amplifier stages in antenna and telecommunication systems GHz at collector currents from 120 mA to 250 mA Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor f ...
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Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base ...
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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency I = 200 mA 200 MHz C CE Collector-base capacitance MHz ...
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Total power dissipation P tot 2200 mW 1800 1600 1400 1200 1000 800 600 400 200 Permissible Pulse Load totmax totDC 0.005 ...
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Package Outline A 0.7 Foot Print Marking Layout (Example) Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel Pin 1 Package SOT223 6.5 ±0.2 3 ±0 2.3 ±0.1 4.6 0. ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...