BFS 380L6 E6327 Infineon Technologies, BFS 380L6 E6327 Datasheet
BFS 380L6 E6327
Manufacturer Part Number
BFS 380L6 E6327
Description
TRANSISTOR GP BJT NPN 6V TSLP-6
Manufacturer
Infineon Technologies
Datasheet
1.BFS_380L6_E6327.pdf
(3 pages)
Specifications of BFS 380L6 E6327
Transistor Type
2 NPN (Dual)
Voltage - Collector Emitter Breakdown (max)
9V
Frequency - Transition
14GHz
Noise Figure (db Typ @ F)
1.3dB ~ 1.9dB @ 1.8GHz ~ 3GHz
Gain
8dB ~ 12dB
Power - Max
380mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 40mA, 3V
Current - Collector (ic) (max)
80mA
Mounting Type
Surface Mount
Package / Case
TSLP-6-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFS380L6E6327XT
SP000013976
SP000013976
NPN Silicon RF Transistor
Preliminary data
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFS380L6
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1 T
2 For calculation of R
S
High current capability and low figure for
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz
Low noise figure: 1.1 dB at 1.8 GHz
Built in 2 transistors ( TR1, TR2: die as BFR380L3)
wide dynamic range application
S is measured on the collector lead at the soldering point to the pcb
96°C
thJA
Marking
FC
please refer to Application Note Thermal Resistance
1)
2)
1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1
Pin Configuration
1
Symbol
V
V
V
V
I
I
P
T
T
T
Symbol
R
C
B
j
A
stg
CEO
CES
CBO
EBO
tot
thJS
6
5
4
P-TSLP-6-1
-65 ... 150
-65 ... 150
Value
Value
380
150
15
15
80
14
140
6
2
Package
BFS380L6
Jun-11-2003
1
2
Unit
V
mA
mW
°C
Unit
K/W
3
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BFS 380L6 E6327 Summary of contents
Page 1
NPN Silicon RF Transistor Preliminary data High current capability and low figure for wide dynamic range application Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz Low noise figure: 1 1.8 ...
Page 2
Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...
Page 3
Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz, emitter grounded CB ...