BFS 466L6 E6327 Infineon Technologies, BFS 466L6 E6327 Datasheet - Page 7
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BFS 466L6 E6327
Manufacturer Part Number
BFS 466L6 E6327
Description
TRANSISTOR RF TWIN NPN TSLP-6
Manufacturer
Infineon Technologies
Datasheet
1.BFS_466L6_E6327.pdf
(8 pages)
Specifications of BFS 466L6 E6327
Transistor Type
2 NPN (Dual)
Voltage - Collector Emitter Breakdown (max)
5V, 9V
Frequency - Transition
22GHz, 14GHz
Noise Figure (db Typ @ F)
1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Gain
12dB ~ 17dB
Power - Max
200mW, 210mW
Dc Current Gain (hfe) (min) @ Ic, Vce
90 @ 20mA, 3V / 90 @ 15mA, 3V
Current - Collector (ic) (max)
50mA, 35mA
Mounting Type
Surface Mount
Package / Case
TSLP-6-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFS466L6E6327XT
SP000014240
SP000014240
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
For board assembly information please refer to Infineon website "Packages"
Reel ø180 mm = 15.000 Pieces/Reel
6
5
4
1
2
3
1) Dimension applies to plated terminal
Pin 1 marking
Top view
0.37
Copper
Pin 1
marking
0.8
0.18
0.05 MAX.
Package TSLP-6-1
0.25
Solder mask
1.05
4
0.4
+0.1
7
2 x 0.35
0.55
0.5
0.29
4 x 0.15
Only 100 µm stencil thickness
recommended
±0.035
BFS360L6
Type code
Pin 1 marking
Laser marking
±0.05
Stencil apertures
3
2
1
1)
Bottom view
±0.035
0.45
0.76
0.8
0.8
±0.05
±0.05
1)
0.22
0.25
0.25
4
5
6
R0.125
BFS466L6
2007-04-26