BT168GW,115 NXP Semiconductors, BT168GW,115 Datasheet - Page 3

• Manufacturer Part Number: BT168GW,115
• Description: THYRISTOR 1A 600V SOT-223
• Manufacturer: NXP Semiconductors

Specifications of BT168GW,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Scr Type: Sensitive Gate
• Voltage - Off State: 600V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.7V
• Current - On State (it (av)) (max): 630mA
• Current - On State (it (rms)) (max): 1A
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 100µA
• Current - Non Rep. Surge 50, 60hz (itsm): 8A, 9A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Current - On State (it (rms) (max): 1A
• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3682-2; 934042590115; BT168GW T/R

Philips Semiconductors
9397 750 13509
Product data sheet
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
I
I
TSM
TSM
(A)
(A)
10
10
10
10
8
6
4
2
0
1
3
2
10
f = 50 Hz.
values
t
p
1
5
10 ms.
10
10
4
Rev. 04 — 12 November 2004
Thyristors; logic level for RCD/GFI/LCCB applications
10
10
2
3
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
T
I
T
t
j
p
T
initial = 25 C max
I
n
(s)
T
j
initial = 25 C max
t
p
BT168GW
t
p
I
001aab499
001aab497
TSM
I
TSM
t
t
10
10
3
2
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