EC103D1,116 NXP Semiconductors, EC103D1,116 Datasheet - Page 10

• Manufacturer Part Number: EC103D1,116
• Description: THYRISTOR GATE 600V 0.8A SOT54
• Manufacturer: NXP Semiconductors

Specifications of EC103D1,116

• Package / Case: TO-92-3 (Standard Body), TO-226
• Scr Type: Sensitive Gate
• Voltage - Off State: 400V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.35V
• Current - On State (it (av)) (max): 500mA
• Current - On State (it (rms)) (max): 800mA
• Current - Gate Trigger (igt) (max): 12µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 100µA
• Current - Non Rep. Surge 50, 60hz (itsm): 8A, 9A
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 800mA
• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Forward Voltage Drop: 1.35 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.012 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056686116; EC103D1 T/R; EC103D1 T/R

NXP Semiconductors
9. Revision history
Table 6.
EC103D1_2
Product data sheet
Document ID
EC103D1_2
Modifications:
EC103D1-01
(9397 750 08574)
Revision history
Release date
20080731
20011101
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The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Table 3 “Limiting values” on page
Table 5 “Characteristics” on page
Figure 4 on page 4
Figure 6 on page
Figure 11
Figure 12
;
;
graph added.
graph added.
Data sheet status
Product data sheet
Product data
5; graph redrawn.
Rev. 02 — 31 July 2008
;
graph redrawn.
2; V
6; dV
DSM
D
/dt uprated.
and V
Change notice
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-
RSM
added.
Thyristor, sensitive gate
Supersedes
EC103D1-01
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EC103D1
© NXP B.V. 2008. All rights reserved.
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