BT150-500R,127 NXP Semiconductors, BT150-500R,127 Datasheet

BT150-500R,127

Manufacturer Part Number

BT150-500R,127

Description

THYRISTOR 500V 4A SOT78

Manufacturer

NXP Semiconductors

Datasheet

1.BT150-500R127.pdf (6 pages)

Specifications of BT150-500R,127

Package / Case

TO-220AB-3

Scr Type

Sensitive Gate

Voltage - Off State

500V

Voltage - Gate Trigger (vgt) (max)

1.5V

Voltage - On State (vtm) (max)

1.8V

Current - On State (it (av)) (max)

2.5A

Current - On State (it (rms)) (max)

Current - Gate Trigger (igt) (max)

200µA

Current - Hold (ih) (max)

6mA

Current - Off State (max)

500µA

Current - Non Rep. Surge 50, 60hz (itsm)

35A, 38A

Operating Temperature

-40°C ~ 125°C

Mounting Type

Through Hole

Current - On State (it (rms) (max)

Breakover Current Ibo Max

38 A

Rated Repetitive Off-state Voltage Vdrm

500 V

Off-state Leakage Current @ Vdrm Idrm

0.1 mA

On-state Rms Current (it Rms)

4 A

Forward Voltage Drop

1.23 V

Gate Trigger Voltage (vgt)

0.4 V

Maximum Gate Peak Inverse Voltage

5 V

Gate Trigger Current (igt)

15 uA

Holding Current (ih Max)

6 mA

Mounting Style

Through Hole

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

933834980127
BT150-500R
BT150-500R

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Philips Semiconductors

GENERAL DESCRIPTION

Glass passivated, sensitive gate

thyristors in a plastic envelope,

intended for use in general purpose

switching

applications. These devices are

intended to be interfaced directly to

microcontrollers,

circuits and other low power gate

trigger circuits.

PINNING - TO220AB

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/ s.

2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1k or less.

October 1997

Thyristors

logic level

SYMBOL PARAMETER

T(AV)

T(RMS)

TSM

stg

DRM

RGM

G(AV)

tab

/dt

, V

RRM

cathode

anode

gate

anode

and

Repetitive peak off-state

voltages

Average on-state current

RMS on-state current

Non-repetitive peak

on-state current

Repetitive rate of rise of

on-state current after

triggering

Peak gate current

Peak gate voltage

Peak reverse gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

t for fusing

DESCRIPTION

logic

phase

integrated

control

QUICK REFERENCE DATA

PIN CONFIGURATION

CONDITIONS

half sine wave; T

all conduction angles

half sine wave; T

surge

t = 10 ms

t = 8.3 ms

t = 10 ms

over any 20 ms period

SYMBOL

RRM

T(AV)

T(RMS)

TSM

DRM

/dt = 50 mA/ s

= 10 A; I

PARAMETER

Repetitive peak off-state

voltages

Average on-state current

RMS on-state current

Non-repetitive peak on-state

current

tab

= 50 mA;

1 2 3

= 25 ˚C prior to

113 ˚C

BT150-

MIN.

-40

SYMBOL

-500R -600R -800R

500

MAX. MAX. MAX. UNIT

500R

500

2.5

MAX.

Product specification

600

125

150

2.5

6.1

0.5

600R

600

2.5

BT150 series

800

800R

800

2.5

Rev 1.300

UNIT

A/ s

˚C

Related parts for BT150-500R,127

BT150-500R,127 Summary of contents

Page 1

... CONDITIONS half sine wave; T 113 ˚C mb all conduction angles half sine wave ˚C prior to j surge over any 20 ms period 1 Product specification BT150 series MAX. MAX. MAX. UNIT BT150- 500R 600R 800R 500 600 800 2.5 2.5 2 SYMBOL MIN. MAX. ...

Page 2

... DRM(max) R RRM(max) j CONDITIONS 125 ˚C; DM DRM(max) j exponential waveform 100 mA DRM(max / 125 ˚ DRM(max / / Product specification BT150 series MIN. TYP. MAX. UNIT - - 2.5 K K/W MIN. TYP. MAX. UNIT - 15 200 - 0. 0. 1.23 1 0.4 1.5 V 0.1 0 0.1 0.5 mA MIN. TYP. MAX. UNIT ...

Page 3

... C 1.4 1.2 1 0.8 0.6 0.4 100 150 -50 , T(RMS Product specification BT150 series I TSM time Tj initial = 25 C max 10 100 Number of half cycles at 50Hz , versus number of cycles, for TSM sinusoidal currents Hz. BT150 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents Hz; T 113˚ ...

Page 4

... Fig.11. Transient thermal impedance dVD/dt (V/us) 1000 100 10 1 100 150 (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT150 series BT148 typ max 0.5 1 1 BT148 0.1ms 1ms 10ms 0. versus th j-mb pulse width RGK = 100 ohms ...

Page 5

... Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1997 10,3 max 3,7 2,8 3,0 13,5 min 1 0,9 max (3x) 2,54 2,54 Fig.13. TO220AB; pin 2 connected to mounting base. 5 Product specification BT150 series 4,5 max 1,3 5,9 min 15,8 max 0,6 2,4 Rev 1.300 ...

Page 6

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1997 6 Product specification BT150 series Rev 1.300 ...

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