BTH151S-650R,118 NXP Semiconductors, BTH151S-650R,118 Datasheet - Page 2

• Manufacturer Part Number: BTH151S-650R,118
• Description: THYRISTOR 12A 650V SOT428
• Manufacturer: NXP Semiconductors

Specifications of BTH151S-650R,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Scr Type: Standard Recovery
• Voltage - Off State: 650V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 7.5A
• Current - On State (it (rms)) (max): 12A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 20mA
• Current - Off State (max): 500µA
• Current - Non Rep. Surge 50, 60hz (itsm): 110A, 121A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Current - On State (it (rms) (max): 12A
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055800118; BTH151S-650R /T3; BTH151S-650R /T3

Philips Semiconductors
Thyristor
High Repetitive Surge
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
March 2001
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
I
I
I
V
V
I
j
SYMBOL PARAMETER
dV
t
t
GT
L
H
D
gt
q
Fig.1. Repetitive surge conditions. I
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
T
GT
th j-mb
th j-a
, I
D
Ip = 60 A
R
/dt
Thermal resistance
junction to mounting base
Thermal resistance
junction to ambient
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
10ms
P
=60A (f=50Hz) at Tc=45˚C. Maximum number of cycles n=100k. Repetitive
CONDITIONS
pcb (FR4) mounted; footprint as in Fig.14
CONDITIONS
V
V
V
I
V
V
V
CONDITIONS
V
exponential waveform;
I
dI
V
I
dV
T
TM
TM
D
D
D
D
D
D
DM
D
G
= 23 A
cycle T=3 seconds minimum.
D
/dt = 5 A/ s
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= V
= V
= 40 A; V
= 67% V
= 20 A; V
3 s (Minimum)
/dt = 50 V/ s; R
= 67% V
DRM(max)
DRM(max)
T
GT
GT
T
DRM(max)
D
R
DRM(max)
= 0.1 A
= 0.1 A
; I
; V
= 0.1 A
= 0.1 A
= V
= 25 V; dI
T
R
2
= 0.1 A; T
= V
DRM(max)
; T
; T
GK
RRM(max)
j
= 125 ˚C;
j
= 100
Gate open circuit
= 125 ˚C;
TM
; I
/dt = 30 A/ s;
G
j
= 125 ˚C
; T
R
= 0.1 A;
GK
j
= 125 ˚C
= 100
MIN.
MIN.
MIN.
0.25
200
50
-
-
-
-
-
-
-
-
-
-
BTH151S-650R
TYP.
TYP.
TYP.
1000
130
1.4
0.6
0.4
0.1
75
10
70
2
7
2
-
Product specification
MAX.
MAX.
MAX.
1.75
1.8
1.5
0.5
15
40
20
-
-
-
-
-
-
Rev 1.001
UNIT
UNIT
UNIT
V/ s
V/ s
K/W
K/W
mA
mA
mA
mA
V
V
V
s
s