BT151-800C,127 NXP Semiconductors, BT151-800C,127 Datasheet - Page 5

• Manufacturer Part Number: BT151-800C,127
• Description: THYRISTOR 12A 800V TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of BT151-800C,127

• Package / Case: TO-220AB-3
• Scr Type: Standard Recovery
• Voltage - Off State: 800V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 7.5A
• Current - On State (it (rms)) (max): 12A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 20mA
• Current - Off State (max): 500µA
• Current - Non Rep. Surge 50, 60hz (itsm): 100A, 110A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 12A
• Breakover Current Ibo Max: 110 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1777; 934058482127; BT151-800C

Philips Semiconductors
MECHANICAL DATA
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
April 2004
Thyristors
Dimensions in mm
Net Mass: 2 g
not tinned
3,0 max
max
(2x)
1,3
Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base.
1 2 3
2,54 2,54
10,3
max
3,7
5
3,0
2,8
0,9 max (3x)
13,5
min
1,3
4,5
max
BT151 series C
Product specification
min
5,9
2,4
0,6
Rev 1.000
15,8
max