BT151-650R,127 NXP Semiconductors, BT151-650R,127 Datasheet - Page 3

• Manufacturer Part Number: BT151-650R,127
• Description: THYRISTOR 12A 650V TO220AB
• Manufacturer: NXP Semiconductors
• Type: SCRr

Specifications of BT151-650R,127

• Package / Case: TO-220AB-3
• Scr Type: Standard Recovery
• Voltage - Off State: 650V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 7.5A
• Current - On State (it (rms)) (max): 12A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 20mA
• Current - Off State (max): 500µA
• Current - Non Rep. Surge 50, 60hz (itsm): 120A, 132A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 12A
• Breakover Current Ibo Max: 132 A
• Rated Repetitive Off-state Voltage Vdrm: 650 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Repetitive Peak Off-state Volt: 650V
• Off-state Voltage: 650V
• Average On-state Current: 7.5A
• Hold Current: 20mA
• Gate Trigger Current (max): 15mA
• Gate Trigger Voltage (max): 1.5V
• Peak Reverse Gate Voltage: 5V
• Package Type: TO-220AB
• Peak Repeat Off Current: 500uA
• Peak Surge On-state Current (max): 132A
• On State Voltage(max): 1.75@23AV
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3674-5; 933387730127; BT151-650R

NXP Semiconductors
BT151_SER_L_R_4
Product data sheet
Fig 1. Total power dissipation as a function of average on-state current; maximum values
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
I
P
(W)
TSM
(A)
tot
160
120
15
10
80
40
5
0
0
Form factor a = I
f = 50 Hz
values
0
1
T(RMS)
/I
T(AV)
2
10
Rev. 04 — 23 October 2006
4
4
2.8
BT151 series L and R
10
2
2.2
conduction
(degrees)
angle
120
180
30
60
90
6
factor
1.9
form
1.57
2.8
2.2
1.9
a
4
T
I
T
n
j
I
initial = 25 C max
T(AV)
t
p
(A)
© NXP B.V. 2006. All rights reserved.
001aaa958
001aaa957
I
1.57
a =
TSM
t
Thyristors
10
8
3
105.5
T
112
118.5
125
mb(max)
( C)
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