BT151-800R,127 NXP Semiconductors, BT151-800R,127 Datasheet

THYRISTOR 12A 800V TO220AB

BT151-800R,127

Manufacturer Part Number
BT151-800R,127
Description
THYRISTOR 12A 800V TO220AB
Manufacturer
NXP Semiconductors
Datasheets

Specifications of BT151-800R,127

Package / Case
TO-220AB-3
Scr Type
Standard Recovery
Voltage - Off State
800V
Voltage - Gate Trigger (vgt) (max)
1.5V
Voltage - On State (vtm) (max)
1.75V
Current - On State (it (av)) (max)
7.5A
Current - On State (it (rms)) (max)
12A
Current - Gate Trigger (igt) (max)
15mA
Current - Hold (ih) (max)
20mA
Current - Off State (max)
500µA
Current - Non Rep. Surge 50, 60hz (itsm)
120A, 132A
Operating Temperature
-40°C ~ 125°C
Mounting Type
Through Hole
Current - On State (it (rms) (max)
12A
Breakover Current Ibo Max
132 A
Rated Repetitive Off-state Voltage Vdrm
800 V
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Forward Voltage Drop
1.75 V
Gate Trigger Voltage (vgt)
1.5 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
15 mA
Holding Current (ih Max)
20 mA
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-3675-5
933387740127
BT151-800R
1. Product profile
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
cathode (K)
anode (A)
gate (G)
mounting base; connected to anode
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Passivated thyristors in a SOT78 plastic package.
I
I
I
I
I
I
I
I
I
BT151 series L and R
Thyristors
Rev. 04 — 23 October 2006
High thermal cycling performance
Motor control
Ignition circuits
V
V
V
V
V
V
DRM
RRM
DRM
RRM
DRM
RRM
500 V (BT151-500L/R)
500 V (BT151-500L/R)
650 V (BT151-650L/R)
650 V (BT151-650L/R)
800 V (BT151-800R)
800 V (BT151-800R)
Simplified outline
SOT78 (3-lead TO-220AB)
I
I
I
I
I
I
I
I
1 2
High bidirectional blocking voltage
Static switching
Protection circuits
I
I
I
I
I
TSM
T(RMS)
T(AV)
GT
GT
mb
3
5 mA (BT151 series L)
15 mA (BT151 series R)
120 A (t = 10 ms)
7.5 A
12 A
Product data sheet
Symbol
A
sym037
G
K

Related parts for BT151-800R,127

BT151-800R,127 Summary of contents

Page 1

... BT151 series L and R Thyristors Rev. 04 — 23 October 2006 1. Product profile 1.1 General description Passivated thyristors in a SOT78 plastic package. 1.2 Features I High thermal cycling performance 1.3 Applications I Motor control I Ignition circuits 1.4 Quick reference data I V DRM I V RRM I V DRM ...

Page 2

... C; mb see Figure 1 all conduction angles; see and 5 half sine wave prior to j surge; see Figure 2 and over any 20 ms period Rev. 04 — 23 October 2006 BT151 series L and R Min Max [1] - 500 [1] - 650 - 800 [1] - 500 [1] - 650 - 800 - 7.5 Figure 120 ...

Page 3

... I TSM (A) 120 Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT151_SER_L_R_4 Product data sheet 2 Rev. 04 — 23 October 2006 BT151 series L and R 001aaa958 1.57 1.9 2.2 conduction form angle factor (degrees 2.8 90 2.2 120 1.9 180 1 ...

Page 4

... Hz; T 109 C mb Fig 4. RMS on-state current as a function of surge duration; maximum values BT151_SER_L_R_4 Product data sheet 4 10 001aaa954 16 I T(RMS) ( surge duration (s) Fig 5. RMS on-state current as a function of mounting Rev. 04 — 23 October 2006 BT151 series L and initial = 25 C max ( 100 T base temperature ...

Page 5

... Z th(j-mb) (K/ Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width BT151_SER_L_R_4 Product data sheet BT151 series L and R Conditions see Figure 6 in free air Rev. 04 — 23 October 2006 Min Typ Max - - 1 001aaa962 t ...

Page 6

... C; DM DRM(max) j exponential waveform; see Figure 100 GK gate open circuit DRM(max 100 mA 125 C; DM DRM(max (dI /dt / 100 GK Rev. 04 — 23 October 2006 BT151 series L and R Min Typ Max - 1.4 1.75 - 0.6 1.5 0.25 0 0.1 0.5 - 0.1 0.5 200 1000 - 50 130 - ...

Page 7

... Fig 8. Normalized gate trigger current as a function of junction temperature 001aaa959 L( ( (V) T Fig 10. Normalized latching current as a function of junction temperature Rev. 04 — 23 October 2006 BT151 series L and R 001aaa952 100 T 001aaa951 100 T © NXP B.V. 2006. All rights reserved. Thyristors 150 ( C) j 150 ( C) j ...

Page 8

... Product data sheet 001aaa950 / 100 150 (1) R (2) Gate open circuit Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; minimum values Rev. 04 — 23 October 2006 BT151 series L and R 001aaa949 (1) (2) 50 100 100 GK © NXP B.V. 2006. All rights reserved. Thyristors 150 ...

Page 9

... 0.7 16.0 6.6 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 Rev. 04 — 23 October 2006 BT151 series L and mounting base max. 15.0 3.30 3.8 3.0 3.0 12.8 2.79 3.5 2.7 EUROPEAN PROJECTION Thyristors SOT78 Q 2.6 2.2 ...

Page 10

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Added type numbers BT151-500L and BT151-650L BT151_SERIES_3 20040607 (9397 750 13159) BT151_SERIES_2 ...

Page 11

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 04 — 23 October 2006 BT151 series L and R Trademarks © NXP B.V. 2006. All rights reserved. Thyristors ...

Page 12

... Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 10 Contact information Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 BT151 series L and R Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2006. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com ...

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