HBDM60V600W-7 Diodes Inc, HBDM60V600W-7 Datasheet

TRANS ARRAY NPN/PNP DUAL SOT-363

HBDM60V600W-7

Manufacturer Part Number
HBDM60V600W-7
Description
TRANS ARRAY NPN/PNP DUAL SOT-363
Manufacturer
Diodes Inc
Datasheet

Specifications of HBDM60V600W-7

Transistor Type
NPN, PNP
Current - Collector (ic) (max)
500mA, 600mA
Voltage - Collector Emitter Breakdown (max)
65V, 60V
Vce Saturation (max) @ Ib, Ic
400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 1V / 100 @ 150mA, 10V
Power - Max
200mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
HBDM60V600WDITR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HBDM60V600W-7
Manufacturer:
DIODES
Quantity:
180
Thermal Characteristics: Total Device
Maximum Ratings: Total Device
Maximum Ratings: Sub-Component Devices
Features
Operating and Storage Junction Temperature Range
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient Air (Note 3)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 3)
Notes:
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
Sub-Component P/N
MMBT2907A_DIE
Epitaxial Planar Die Construction
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
MMBTA06_DIE
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 7 or on Diodes Inc. suggested pad layout document
1. No purposefully added lead.
AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic
Characteristic
Characteristic
Reference
Q1
Q2
PNP Transistor
NPN Transistor
Device Type
@T
Top View
A
= 25°C unless otherwise specified
Symbol
www.diodes.com
V
V
V
TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER
CBO
CEO
EBO
I
C
1 of 7
Symbol
Symbol
@T
V
R
P
EBO
θ JA
D
A
Mechanical Data
= 25°C unless otherwise specified
Please click here to visit our online spice models database.
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Schematic & Pin Configuration
Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 6
Ordering Information: See Page 6
Weight: 0.016 grams (approximate)
Q1-PNP Transistor
MMBT2907A
COMPLEX TRANSISTOR ARRAY FOR BIPOLAR
(MMBT2907A)
CQ1
BQ1
Device Schematic
-600
-5.5
-60
-60
Q1
EQ1
BQ2
MMBTA06
-55 to +150
Value
Value
EQ2
CQ2
200
625
Q2
Q2-NPN Transistor
(MMBTA06)
500
80
65
HBDM60V600W
6
© Diodes Incorporated
°C/W
Unit
Unit
mW
°C
July 2008
Unit
mA
V
V
V

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HBDM60V600W-7 Summary of contents

Page 1

... Symbol V EBO Symbol θ 25°C unless otherwise specified A Q1-PNP Transistor Symbol (MMBT2907A) V CBO V CEO V -5.5 EBO -600 www.diodes.com HBDM60V600W EQ1 EQ2 Q1 Q2 MMBTA06 BQ2 CQ2 Value Unit -55 to +150 °C Value Unit 200 mW 625 °C/W Q2-NPN Transistor (MMBTA06) - 500 © Diodes Incorporated ...

Page 2

... EBO ⎯ ⎯ 250 h FE ⎯ ⎯ 100 ⎯ 0.2 0.4 V CE(SAT) V 0.7 0.75 0.8 BE(ON) ⎯ ⎯ 0.95 V BE(SAT) ⎯ ⎯ f 100 MHz www.diodes.com HBDM60V600W Test Condition I = -10μ -10mA -10μ -50V -30V -0.5V CE EB(OFF -30V -0.5V CE EB(OFF -100μA, V ...

Page 3

... Cibo 1.0 0.8 0.6 0.4 Cobo 0.2 0 0.001 30 10 1,000 100 T = 150° -50° 100 1,000 www.diodes.com HBDM60V600W I = 300mA 10mA 100mA 1mA 30mA C 1 0.01 0 BASE CURRENT (mA) B Fig. 3 Typical Collector Saturation Region 150° 25° -50°C A ...

Page 4

... T = 25°C A 100 -50°C A 100 1,000 www.diodes.com HBDM60V600W COLLECTOR CURRENT (mA 30mA 10mA 100mA 1mA C 1 0.01 0 BASE CURRENT (mA) B, Fig. 9 Typical Collector Saturation Region 100 I , COLLECTOR CURRENT (mA) C Fig ...

Page 5

... Fig. 12 Typical Base Emitter Voltage vs. Collector Current Current Schematic along with Application Example Note: D1, D2, D3, D4: Switching Diodes (MMBD4448) Q3, Q4: NPN Transistors (MMBTA06) HBDM60V600W Document number: DS30701 Rev 1,000 100 100 1 Fig. 13 Typical Gain Bandwidth Product vs. Collector Current www.diodes.com HBDM60V600W I , COLLECTOR CURRENT (mA © Diodes Incorporated 10 July 2008 ...

Page 6

... Application Example Schematic: (with Package Pinouts Ordering Information (Note 5) Part Number HBDM60V600W-7 Notes: 5. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 2006 2007 Code T U Month Jan Feb Code 1 2 HBDM60V600W HBDM60V600W Document number: DS30701 Rev Document number: DS30701 Rev ...

Page 7

... C E IMPORTANT NOTICE ghts of others. The user of products in such applications shall rporated a nd all the companies whose products LIFE SUPPORT al compo nents in life support devices www.diod es.com HBDM60V600W SOT-363 Min Max 0.10 0.30 1.15 1.35 2.00 2.20 0.65 Typ 0.40 0.45 1 ...

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