HBDM60V600W-7 Diodes Inc, HBDM60V600W-7 Datasheet - Page 4

• Manufacturer Part Number: HBDM60V600W-7
• Description: TRANS ARRAY NPN/PNP DUAL SOT-363
• Manufacturer: Diodes Inc

Specifications of HBDM60V600W-7

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 500mA, 600mA
• Voltage - Collector Emitter Breakdown (max): 65V, 60V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V / 100 @ 150mA, 10V
• Power - Max: 200mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: HBDM60V600WDITR

NPN (MMBTA06) Transistor (Q2) Plots
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
Fig. 10 Typical Collector Emitter Saturation Voltage vs. Collector Current
Fig. 8 Typical Collector-Cutoff Current vs. Ambient Tempera
0.01
0.250
0.500
0.450
0.400
0.350
0.300
0.200
0.150
0.100
0.050
0.1
1.0
0.9
0.7
0.6
0.5
0.4
0.2
10
0.8
0.3
1
Fig. 6 Typical Base Emitter Voltage vs. Collector Current
25
0.1
0
1
V
I
I
C
B
CE
= 10
= 5V
T , AMBIENT TEMPERATURE (ºC)
I , COLLECTOR CURRENT (mA)
A
C
-I , COLLECTOR CURRENT (mA)
C
50
1
10
T = 150°C
A
75
T = -50°C
A
T = 25°C
A
T = 25°C
100
10
A
T = 150°C
100
A
T = -50°C
A
1,000
125
100
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1,000
100
10
10,000
Fig. 7 Typical Gain Bandwidth Product vs. Collector Current
1
1,000
1
2.0
1.8
1.6
1.4
1.2
100
1.0
0.8
0.6
0.4
0.2
10
0.001
0
1
1
Fig. 11 Typical DC Current Gain vs. Collector Curren
Fig. 9 Typical Collector Saturation Region
-I , COLLECTOR CURRENT (mA)
I = 10mA
C
I = 1mA
C
C
0.01
I , COLLECTOR CURRENT (mA)
C
I BASE CURRENT (mA)
B,
10
0.1
10
I = 30mA
C
1
HBDM60V600W
I = 100mA
C
100
10
© Diodes Incorporated
100
1,000
100
July 2008
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