BC847BV-7 Diodes Inc, BC847BV-7 Datasheet - Page 2

• Manufacturer Part Number: BC847BV-7
• Description: TRANS DUAL NPN 45V SOT-563
• Manufacturer: Diodes Inc

Specifications of BC847BV-7

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 150mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-563
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: BC847BVDITR

Electrical Characteristics
DS30627 Rev. 4 - 2
Note:
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
1000
1000
100
4. Short duration pulse test used to minimize self-heating effect.
100
10
10
1
0.01
0.1
100°C
T = 25°C
V
Characteristic (Note 4)
A
-50°C
Fig. 1, DC Current Gain vs Collector Current
T = 25°C
CE
A
= 5V
vs Collector Current (BC847B Type)
I , COLLECTOR CURRENT (mA)
I , COLLECTOR CURRENT (mA)
C
C
Fig. 3, Gain Bandwidth Product
0.1
1.0
(BC847B Type)
1.0
@ T
V
10
A
CE
= 25°C unless otherwise specified
=5V
10
V
CE
V
= 10V
CE
= 2V
V(
V(
V(
Symbol
V
V
V
www.diodes.com
CE(SAT)
BE(SAT)
C
BR)CBO
BR)CEO
BR)EBO
BE(ON)
I
100
h
CBO
100
CBO
f
FE
T
2 of 4
Min
200
580
100
50
45
—
—
—
—
—
—
6
Typ
290
200
700
900
660
300
16
14
12
10
3.5
0.5
0.4
0.3
90
0.2
—
—
—
—
—
—
0.1
8
4
2
0
6
0
0.1
0
NPN, BC847B Type (Q
I
I
C
B
Fig. 4, Capacitance vs. Reverse Voltage
Fig. 2, Collector-Emitter Saturation Voltage
= 20
Max
450
250
600
700
720
5.0
6.0
15
—
—
—
—
—
5
vs Collector Current (BC847B Type)
I , COLLECTOR CURRENT (mA)
Cibo
C
V , REVERSE VOLTAGE (V)
R
10
1.0
MHz
Unit
(BC847B Type)
mV
mV
mV
nA
µA
pF
—
V
V
V
T = 25°C
T = -50°C
A
A
15
I
I
I
V
I
I
I
I
V
V
V
V
V
f = 100MHz
V
T = 100°C
C
C
E
C
C
C
C
A
CE
CE
CE
CB
CB
CE
CB
= 1 A, I
= 10 A, I
= 10mA, I
= 10mA, I
= 100mA, I
= 10mA, I
= 100mA, I
= 5.0V, I
= 5.0V, I
=5.0V, I
= 30V
= 30V, T
= 5.0V, I
= 10V, f = 1.0MHz
20
10
Test Condition
Cobo
1
C
)
f = 1MHz
B
= 0
B
B
B
C
25
C
C
A
C
= 0
B
B
= 0
= 0.5mA
= 0.5mA
= 10mA
= 2.0mA
= 2.0mA
= 150°C
= 10mA,
= 5.0mA
= 5.0mA
BC847BVN
100
30