BC847BV-7 Diodes Inc, BC847BV-7 Datasheet - Page 3

• Manufacturer Part Number: BC847BV-7
• Description: TRANS DUAL NPN 45V SOT-563
• Manufacturer: Diodes Inc

Specifications of BC847BV-7

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 150mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-563
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: BC847BVDITR

Electrical Characteristics
DS30627 Rev. 4 - 2
Note:
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
-1000
-100
-1000
-10
-100
5. Short duration pulse test used to minimize self-heating effect.
-10
-1
-1
-1
Characteristic (Note 5)
T = 25°C
V
A
CE
vs Collector Current (BC857B Type)
vs. Collector Current (BC857B Type)
= -5V
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
Fig. 7, Gain Bandwidth Product
C
T = 150°C
A
Fig. 5, DC Current Gain
-10
T =
A
-
50°C
-10
@ T
-100
A
= 25°C unless otherwise specified
V
CE
= 5V
V(
V(
V(
Symbol
V
V
V
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CE(SAT)
C
BE(SAT)
BR)CBO
BR)CEO
BR)EBO
BE(ON)
I
-100
h
-1000
CBO
CBO
f
FE
T
3 of 4
-600
Min
220
100
-50
-45
—
—
—
—
—
—
-5
-0.2
-0.5
-0.4
-0.3
-0.1
-250
-700
-850
-650
Typ
20
14
290
200
18
16
12
-75
10
0
—
—
—
—
—
—
2
3
4
0
8
6
-0.1
0
PNP, BC857B Type (Q
I
I
Fig. 6, Collector-Emitter Saturation Voltage
C
B
Fig. 8, Capacitance vs. Reverse Voltage
= 10
Max
-300
-650
-950
-750
-820
-4.0
475
-15
4.5
vs. Collector Current (BC857B Type)
—
—
—
—
—
5
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (V)
Cibo
R
-1
T = 150°C
A
10
(BC857B Type)
MHz
Unit
mV
mV
mV
nA
µA
pF
—
V
V
V
15
T = 25°C
-10
A
I
I
I
V
I
I
I
I
V
V
V
V
V
f = 100MHz
V
C
C
E
C
C
C
C
CE
CE
CE
CB
CB
CE
CB
= -1 A, I
= -10 A, I
= -10mA, I
= -10mA, I
= -100mA, I
= -10mA, I
= -100mA, I
20
= -5.0V, I
= -5.0V, I
=- 5.0V, I
= -30V
= -30V, T
= -5.0V, I
= -10V, f = 1.0MHz
Test Condition
2
Cobo
-100
)
C
f = 1MHz
B
25
= 0
B
B
B
T = -50°C
C
C
C
A
C
= 0
B
B
= 0
= -0.5mA
= -0.5mA
A
= -2.0mA
= -2.0mA
= -10mA
= 150°C
= -10mA,
BC847BVN
= -5.0mA
= -5.0mA
30
-1000