UMT2NTR Rohm Semiconductor, UMT2NTR Datasheet - Page 2

• Manufacturer Part Number: UMT2NTR
• Description: TRANS DUAL PNP 50V 150MA SOT-363
• Manufacturer: Rohm Semiconductor

Specifications of UMT2NTR

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 150mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 150mW
• Frequency - Transition: 140MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Module Configuration: Dual
• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: 50V
• Gain Bandwidth Ft Typ: 140MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: -150mA
• Operating Temperature: RoHS Compliant
• Configuration: Dual
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 50 V
• Emitter- Base Voltage Vebo: - 6 V
• Continuous Collector Current: - 150 mA
• Maximum Dc Collector Current: 0.15 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 140 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 140 MHz
• Dc Current Gain Hfe: 120
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Transistors
Electrical characteristics curves
Fig.1 Grounded emitter propagation
−0.05
500
200
100
Fig.7 Collector-emitter saturation
−0.5
−0.2
−0.1
−0.5
−0.2
−0.1
50
−50
−20
−10
−0.2 −0.5 −1 −2
−1
−5
−2
−1
−0.2 −0.5 −1
Fig.4 DC current gain vs.
−0.2
Ta=25˚C
Ta=100˚C
characteristics
BASE TO EMITTER VOLTAGE : V
voltage vs. collector current (II)
COLLECTOR CURRENT : I
−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
COLLECTOR CURRENT : I
−40˚C
25˚C
collector current (I)
Ta=100˚C
−40˚C
−2
25˚C
V
−5 −10 −20
CE
−5 −10 −20
= −5V
−3V
−1V
C
C
(
V
mA)
(
l
CE
mA)
C
−50 −100
/l
= −6V
BE
B
−50 −100
=10
(
V)
1000
500
200
100
500
200
100
−10
50
50
−0.2 −0.5 −1 −2
−8
−6
−4
−2
Fig.2 Grounded emitter output
0.5
Fig.8 Gain bandwidth product vs.
0
COLLECTOR TO MITTER VOLTAGE : V
Ta=25˚C
Fig.5 DC current gain vs.
COLLECTOR CURRENT : I
1
characteristics (I)
−0.4
EMITTER CURRENT : I
emitter current
2
collector current (II)
Ta=100˚C
−0.8
−40˚C
25˚C
5
−5 −10 −20
10
−1.2
20
E
(
C
Ta=25˚C
V
mA)
−1.6
V
(
CE
mA)
CE
−31.5
−28.0
−24.5
−17.5
−14.0
−10.5
−21.0
−35.0
−3.5µA
= − 12V
−7.0
= −6V
−50 −100
50
I
B
=0
CE
−2.0
100
(
V)
EMT2 / UMT2N / IMT2A
−0.05
−0.5
−0.2
−0.1
−100
Fig.6 Collector-emitter saturation
−1
−80
−60
−40
−20
−0.2 −0.5 −1
Fig.9 Collector output capacitance vs.
COLLECTOR TO EMITTER VOLTAGE : V
Fig.3 Grounded emitter output
20
10
0
5
2
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE : V
Ta=25˚C
−500
−450
−400
−350
−300
COLLECTOR CURRENT : I
−0.5
voltage vs. collector current (I)
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
characteristics (II)
−1
−1
I
C
/I
−2
B
Rev.A
= 50
−2
20
10
−2
−5 −10 −20
−3
−5
C
Ta=25˚C
−10
(
−4
mA)
−50µA
Ta=25˚C
f=1MHz
I
I
EB
−250
−200
−150
−100
−50 −100
E
C
= 0A
= 0A
I
B
(V)
CE
=0
−20
CB
2/2
(
V)
(V)
−5