PBSS4140DPN,115 NXP Semiconductors, PBSS4140DPN,115 Datasheet - Page 8

• Manufacturer Part Number: PBSS4140DPN,115
• Description: TRANS NPN/PNP 40V 1A SOT457
• Manufacturer: NXP Semiconductors

Specifications of PBSS4140DPN,115

• Package / Case: SC-74-6
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 500mA, 5V
• Power - Max: 600mW
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 370 mW
• Maximum Operating Frequency: 150 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4153-2; 934056660115; PBSS4140DPN T/R; PBSS4140DPN T/R

NXP Semiconductors
2001 Dec 13
handbook, halfpage
40 V low V
TR2 (PNP); V
Fig.11 Transition frequency as a function of
(MHz)
300
200
100
f T
0
0
collector current; typical values.
CE
−200
= -10 V.
CEsat
−400
NPN/PNP transistor
−600
−800
I C (mA)
MLD641
−
1000
8
PBSS4140DPN
Product data sheet