BC857S Fairchild Semiconductor, BC857S Datasheet - Page 2

• Manufacturer Part Number: BC857S
• Description: TRANSISTOR PNP 45V 200MA SC70-6
• Manufacturer: Fairchild Semiconductor

Specifications of BC857S

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 125 @ 2mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 310 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 125
• Minimum Operating Temperature: - 65 C
• Number Of Elements: 2
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 200mA
• Dc Current Gain (min): 125
• Frequency (max): 200MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

V
V
V
V
I
OFF CHARACTERISTICS
CBO
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
Symbol
h
V
V
f
C
NF
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
T
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
FE
CE(
BE(
obo
Electrical Characteristics
Typical Characteristics
sat
on
)
500
400
300
200
100
)
0
0.01
125 °C
- 40 °C
Typical Pulsed Current Gain
25 °C
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain - Bandwidth Product
Output Capacitance
Noise Figure
vs Collector Current
I - COLLECTOR CURRENT (mA)
0.1
C
Parameter
1
10
V
T
CE
100
A
= 25°C unless otherwise noted
= 5V
PNP Multi-Chip General Purpose Amplifier
I
I
I
I
V
V
C
C
C
E
I
I
I
I
I
I
f = 100 mHz
V
I
R
BW = 200 Hz
C
C
C
C
C
C
C
CB
CB
CB
S
= 10 mA, I
= 10 A, I
= 10 A, I
= 10 A, I
= 2.0 mA, V
= 10 mA, I
= 100 mA, I
= 2.0 mA, V
= 10 mA, V
= 10 mA, V
= 0.2 mA, V
= 30 V
= 30 V, T
= 2.0 k , f = 1.0 kHz,
= 10 V, f = 1.0 MHz
Test Conditions
C
E
E
B
0.25
0.15
0.05
B
A
= 0
= 0
= 0
0.3
0.2
0.1
CE
CE
= 0
B
CE
CE
CE
= 0.5 mA
= 150 C
0
0.1
= 5.0 mA
= 5.0 V
= 5.0,
= 5.0 V
= 5.0 V
= 5.0,
Voltage vs Collector Current
Collector-Emitter Saturation
= 10
I - COLLECTOR CURRE NT (mA)
C
1
125
Min
125
0.6
5.0
45
50
50
°
C
10
25
Typ Max Units
200
3.5
2.5
°
C
- 40
0.65
0.75
0.82
630
0.3
4.0
15
°
100
(continued)
C
MHz
300
pF
dB
nA
V
V
V
V
V
V
V
V
A