BC857S Fairchild Semiconductor, BC857S Datasheet - Page 3

• Manufacturer Part Number: BC857S
• Description: TRANSISTOR PNP 45V 200MA SC70-6
• Manufacturer: Fairchild Semiconductor

Specifications of BC857S

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 125 @ 2mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 310 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 125
• Minimum Operating Temperature: - 65 C
• Number Of Elements: 2
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 200mA
• Dc Current Gain (min): 125
• Frequency (max): 200MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Typical Characteristics
0.01
1.2
0.8
0.6
0.4
0.2
4
3
2
1
0
100
0.1
10
1
0
0.1
1
25
Ic =
Voltage vs Collector Current
V
- 40
Collector Saturation Region
CB
= 10
vs Ambient Temperature
Collector-Cutoff Current
Base-Emitter Saturation
°
C
= 50V
100 uA
I - COLLECTOR CURRE NT (mA)
T - AMBIE NT TEMP ERATURE ( C)
C
A
50
I - BASE CURRENT (uA)
B
1
25
°
C
75
50 mA
100
10
300
(continued)
100
700
125
300 mA
°
°
C
100
2000 4000
Ta = 25°C
300
125
PNP Multi-Chip General Purpose Amplifier
95
90
85
80
75
70
0.8
0.6
0.4
0.2
100
0.1
10
1
0
0.1
0.1
Input and Output Capacitance
Collector-Emitter Breakdown
Base Emitter ON Voltage vs
- 40
Voltage with Resistance
Between Emitter-Base
°
I - COLLECTOR CURRE NT (mA)
V
C
vs Reverse Voltage
C
CE
Collector Current
1
- COLLECTOR VOLTAGE (V)
1
RESISTANCE (k )
1
25
°
10
C
10
10
Cib
125
V
100
f = 1.0 MHz
CE
°
= 5V
C
(continued)
Cob
100 200
1000
100