BC856BS,115 NXP Semiconductors, BC856BS,115 Datasheet - Page 4

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BC856BS,115

Manufacturer Part Number
BC856BS,115
Description
TRANS PNP/PNP 100MA 65V SC88
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC856BS,115

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
65V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
300mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
290
Minimum Operating Temperature
- 55 C
Configuration
Dual
Transistor Polarity
PNP/PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 65 V
Emitter- Base Voltage Vebo
- 6 V
Continuous Collector Current
- 100 mA
Maximum Dc Collector Current
- 200 mA
Power Dissipation
200 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934063583115
NXP Semiconductors
6. Thermal characteristics
BC856BS_1
Product data sheet
Fig 2.
Z
(K/W)
th(j-a)
10
10
10
1
3
2
10
FR4 PCB, standard footprint
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
5
0.50
0.20
0.05
0.01
= 1
0
0.75
0.33
0.10
0.02
10
4
Table 7.
[1]
Symbol
Per transistor
R
R
Per device
R
th(j-a)
th(j-sp)
th(j-a)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
10
Thermal characteristics
3
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
10
Rev. 01 — 11 August 2009
2
10
1
65 V, 100 mA PNP/PNP general-purpose transistor
Conditions
in free air
in free air
1
[1]
[1]
10
Min
-
-
-
Typ
-
-
-
10
2
BC856BS
© NXP B.V. 2009. All rights reserved.
t
p
006aab619
(s)
Max
625
230
416
10
3
Unit
K/W
K/W
K/W
4 of 12

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