PMBT3906YS,115 NXP Semiconductors, PMBT3906YS,115 Datasheet

TRANS PNP/PNP 40V 200MA SOT363

PMBT3906YS,115

Manufacturer Part Number
PMBT3906YS,115
Description
TRANS PNP/PNP 40V 200MA SOT363
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMBT3906YS,115

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
350mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Dual
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.2 A
Power Dissipation
350 mW
Maximum Operating Frequency
250 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934061455115
PMBT3906YS T/R
PMBT3906YS T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMBT3906YS,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
PNP/PNP general-purpose double transistor in a SOT363 (SC-88) very small
Surface-Mounted Device (SMD) plastic package.
Table 1.
I
I
I
I
Table 2.
Type number Package
PMBT3906YS SOT363
Symbol
Per transistor
V
I
h
C
FE
CEO
PMBT3906YS
40 V, 200 mA PNP/PNP general-purpose double transistor
Rev. 02 — 13 May 2009
General-purpose double transistor
Board-space reduction
AEC-Q101 qualified
General-purpose switching and amplification
Product overview
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
NXP
JEITA
SC-88
Conditions
open base
V
I
C
CE
= 10 mA
= 1 V;
NPN/NPN
complement
PMBT3904YS
NPN/PNP
complement
PMBT3946YPN very small
Min
-
-
100
Typ
-
-
180
Product data sheet
Package
configuration
Max
300
40
200
Unit
V
mA

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PMBT3906YS,115 Summary of contents

Page 1

PMBT3906YS 40 V, 200 mA PNP/PNP general-purpose double transistor Rev. 02 — 13 May 2009 1. Product profile 1.1 General description PNP/PNP general-purpose double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. Table 1. Type number ...

Page 2

... NXP Semiconductors 2. Pinning information Table 3. Pin Ordering information Table 4. Type number PMBT3906YS 4. Marking Table 5. Type number PMBT3906YS [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PMBT3906YS_2 Product data sheet 40 V, 200 mA PNP/PNP general-purpose double transistor Pinning Description emitter TR1 ...

Page 3

... NXP Semiconductors 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per transistor V CBO V CEO V EBO tot Per device P tot amb T stg [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Fig 1. ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 7. Symbol Per transistor R th(j-a) R th(j-sp) Per device R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint th(j-a) 0.75 (K/W) 0.5 0.33 2 0.2 10 0.1 0.05 0.02 0. FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; ...

Page 5

... NXP Semiconductors 7. Characteristics Table unless otherwise specified. amb Symbol Per transistor I CBO I EBO CEsat V BEsat off PMBT3906YS_2 Product data sheet 40 V, 200 mA PNP/PNP general-purpose double transistor Characteristics Parameter Conditions collector-base cut-off V CB current emitter-base cut-off V EB current DC current gain V CE ...

Page 6

... NXP Semiconductors 400 h FE (1) 300 200 (2) (3) 100 ( 150 C amb ( amb ( amb Fig 3. DC current gain as a function of collector current; typical values 1 (V) 1.0 (1) 0.8 (2) 0.6 (3) 0 amb ( amb ( 150 C amb Fig 5. Base-emitter voltage as a function of collector current; typical values PMBT3906YS_2 ...

Page 7

... NXP Semiconductors (1) T (2) T (3) T Fig 7. 8. Test information Fig 8. 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors , and is suitable for use in automotive applications. ...

Page 8

... NXP Semiconductors 9. Package outline Fig 9. 10. Packing information Table 9. The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package PMBT3906YS SOT363 [1] For further information and the availability of packing methods, see [2] T1: normal taping [3] T2: reverse taping ...

Page 9

... NXP Semiconductors 11. Soldering Fig 10. Reflow soldering footprint SOT363 (SC-88) 4.5 Fig 11. Wave soldering footprint SOT363 (SC-88) PMBT3906YS_2 Product data sheet 40 V, 200 mA PNP/PNP general-purpose double transistor 2.65 1.5 2.35 0 1.8 1.3 1.3 2.45 5.3 Rev. 02 — 13 May 2009 PMBT3906YS 0 ...

Page 10

... NXP Semiconductors 12. Revision history Table 10. Revision history Document ID Release date PMBT3906YS_2 20090513 • Modifications: Figure PMBT3906YS_1 20080306 PMBT3906YS_2 Product data sheet 40 V, 200 mA PNP/PNP general-purpose double transistor Data sheet status Product data sheet 4: amended Product data sheet Rev. 02 — 13 May 2009 ...

Page 11

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 12

... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 7 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 Packing information Soldering ...

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