BC846BPN,115 NXP Semiconductors, BC846BPN,115 Datasheet - Page 5

• Manufacturer Part Number: BC846BPN,115
• Description: TRANS NPN/PNP 100MA 65V SC88
• Manufacturer: NXP Semiconductors

Specifications of BC846BPN,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Mounting Type: Surface Mount
• Power - Max: 300mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Transistor Type: NPN, PNP
• Frequency - Transition: 100MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA / 900mV @ 5mA, 100mA
• Dc Collector/base Gain Hfe Min: 270
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 65 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 100 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934063471115

NXP Semiconductors
7. Characteristics
BC846BPN_1
Product data sheet
Table 8.
T
Symbol Parameter
TR1 (NPN)
I
I
h
V
V
V
C
C
f
NF
TR2 (PNP)
I
I
h
V
CBO
EBO
T
CBO
EBO
amb
FE
FE
CEsat
BEsat
BE
CEsat
c
e
= 25 C unless otherwise specified.
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage V
collector capacitance V
emitter capacitance
transition frequency
noise figure
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
Characteristics
Rev. 01 — 17 July 2009
Conditions
V
V
T
V
V
I
I
I
I
f = 1 MHz
V
f = 1 MHz
V
f = 100 MHz
V
R
f = 10 Hz to 15.7 kHz
V
R
B = 200 Hz
V
V
T
V
V
I
I
I
C
C
C
C
C
B
C
j
j
CB
CB
EB
CE
CE
CB
EB
CE
CE
CE
CB
CB
EB
CE
S
S
I
I
I
I
I
I
= 150 C
= 150 C
= 0.5 mA
= 10 mA; I
= 100 mA; I
= 10 mA; I
= 100 mA; I
= 10 mA;
= 100 mA; I
C
C
C
C
C
C
= 2 k ;
= 2 k ; f = 1 kHz;
= 6 V; I
= 0.5 V; I
= 6 V; I
= 50 V; I
= 30 V; I
= 5 V
= 5 V
= 10 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 50 V; I
= 30 V; I
= 5 V
= 10 A
= 2 mA
= 2 mA
= 10 mA
= 10 A
= 2 mA
65 V, 100 mA NPN/PNP general-purpose transistor
C
C
C
C
C
E
E
B
B
E
= 0 A
C
= 10 mA;
= 0.2 mA;
= 0.2 mA;
B
B
E
E
= 0.5 mA
= 0.5 mA
= 0 A
= 0 A
= 0 A;
= i
= i
B
= 5 mA
= 5 mA
= 0 A
= 0 A;
e
= 5 mA
c
= 0 A;
= 0 A;
Min
-
-
-
-
200
-
-
-
-
580
-
-
-
100
-
-
-
-
-
-
200
-
-
BC846BPN
Typ
-
-
-
280
300
55
200
755
1000
650
-
1.9
11
-
1.9
3.1
-
-
-
270
290
55
200
© NXP B.V. 2009. All rights reserved.
Max
15
5
100
-
450
100
300
850
-
700
770
-
-
-
-
-
-
450
15
5
100
100
300
Unit
nA
nA
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
dB
nA
nA
mV
mV
A
A
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