BC857BS,115 NXP Semiconductors, BC857BS,115 Datasheet - Page 4

• Manufacturer Part Number: BC857BS,115
• Description: TRANSISTOR PNP 45V 100MA SC-88
• Manufacturer: NXP Semiconductors

Specifications of BC857BS,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Mounting Type: Surface Mount
• Power - Max: 200mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Transistor Type: 2 PNP (Dual)
• Frequency - Transition: 100MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934042510115::BC857BS T/R::BC857BS T/R

NXP Semiconductors
1999 Apr 26
handbook, full pagewidth
PNP general purpose double transistor
h FE
400
300
200
100
−10
0
−2
−10
−1
Fig.2 DC current gain; typical values
−1
4
−10
V CE = −5 V
−10
2
I C (mA)
Product data sheet
BC857BS
MBH727
−10
3