BC857BV,115 NXP Semiconductors, BC857BV,115 Datasheet

TRANSISTOR PNP 45V 100MA SOT666

BC857BV,115

Manufacturer Part Number
BC857BV,115
Description
TRANSISTOR PNP 45V 100MA SOT666
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC857BV,115

Package / Case
SS Mini-6 (SOT-666)
Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
200mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
200
Minimum Operating Temperature
- 65 C
Configuration
Dual
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 45 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 100 mA
Maximum Dc Collector Current
- 200 mA
Power Dissipation
200 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056711115
BC857BV T/R
BC857BV T/R
Product data sheet
Supersedes data of 2001 Aug 10
DATA SHEET
BC857BV
PNP general purpose double
transistor
DISCRETE SEMICONDUCTORS
M3D744
2001 Nov 07

Related parts for BC857BV,115

BC857BV,115 Summary of contents

Page 1

DATA SHEET BC857BV PNP general purpose double transistor Product data sheet Supersedes data of 2001 Aug 10 DISCRETE SEMICONDUCTORS M3D744 2001 Nov 07 ...

Page 2

... NXP Semiconductors PNP general purpose double transistor FEATURES • 300 mW total power dissipation • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package • Excellent coplanarity due to straight leads • Improved thermal behaviour due to flat leads • Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors • ...

Page 3

... NXP Semiconductors PNP general purpose double transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per transistor V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current BM P total power dissipation ...

Page 4

... NXP Semiconductors PNP general purpose double transistor CHARACTERISTICS = 25 °C; unless otherwise specified. T amb SYMBOL PARAMETER Per transistor I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V base-emitter voltage BE V collector-emitter saturation CEsat voltage V base-emitter saturation voltage BEsat C collector capacitance ...

Page 5

... NXP Semiconductors PNP general purpose double transistor Graphical information BC857BV 1000 handbook, halfpage h FE 800 600 (1) 400 (2) 200 (3) 0 −2 −1 −10 − − 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain; typical values. −10 ...

Page 6

... NXP Semiconductors PNP general purpose double transistor PACKAGE OUTLINE Plastic surface mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 2001 Nov scale 1.3 1.7 0.3 1.0 ...

Page 7

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 8

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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