PEMX1,115 NXP Semiconductors, PEMX1,115 Datasheet - Page 2

• Manufacturer Part Number: PEMX1,115
• Description: TRANS NPN 40V 100MA SOT666
• Manufacturer: NXP Semiconductors

Specifications of PEMX1,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 300mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 120
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 100 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056704115; PEMX1 T/R; PEMX1 T/R

NXP Semiconductors
FEATURES
• 300 mW total power dissipation
• Very small 1.6 mm x 1.2 mm ultra thin package
• Excellent coplanarity due to straight leads
• Replaces two SC-75/SC-89 packaged transistors on
• Reduced required PCB area
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN double transistor pair in a SOT666 plastic package.
PNP complement: PEMT1.
MARKING
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
2001 Nov 07
PEMX1
Per transistor
V
V
V
I
I
I
P
T
T
T
Per device
P
SYMBOL
C
CM
BM
same PCB area
stg
j
amb
CBO
CEO
EBO
tot
tot
NPN general purpose double transistor
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
total power dissipation
PARAMETER
MARKING CODE
ZZ
open emitter
open base
open collector
T
T
amb
amb
≤ 25 °C; note 1
≤ 25 °C; note 1
2
CONDITIONS
PINNING
handbook, halfpage
PIN
1, 4
2, 5
6, 3
Fig.1 Simplified outline (SOT666) and symbol.
Top view
6
1
emitter
base
collector
5
2
−
−
−
−
−
−
−
−65
−
−65
−
3
4
TR1; TR2
TR1; TR2
TR1; TR2
MIN.
DESCRIPTION
MAM447
50
40
5
100
200
200
200
+150
150
+150
300
TR1
Product data sheet
MAX.
6
1
PEMX1
5
2
V
V
V
mA
mA
mA
mW
°C
°C
°C
mW
4
3
TR2
UNIT