BCM857DS,115 NXP Semiconductors, BCM857DS,115 Datasheet - Page 4
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BCM857DS,115
Manufacturer Part Number
BCM857DS,115
Description
TRANS PNP/PNP 45V 100MA SC74
Manufacturer
NXP Semiconductors
Datasheet
1.BCM857DS115.pdf
(15 pages)
Specifications of BCM857DS,115
Package / Case
SC-74-6
Mounting Type
Surface Mount
Power - Max
380mW
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Transistor Type
2 PNP (Dual)
Frequency - Transition
175MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 100mA
Minimum Operating Temperature
- 65 C
Configuration
Dual
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
380 mW
Maximum Operating Frequency
175 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934059033115::BCM857DS T/R::BCM857DS T/R
NXP Semiconductors
7. Characteristics
BCM857BV_BS_DS_6
Product data sheet
Table 7.
[1]
[2]
Table 8.
T
Symbol
Per device
R
Symbol
Per transistor
I
I
h
V
V
V
C
C
CBO
EBO
amb
FE
CEsat
BEsat
BE
th(j-a)
c
e
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
= 25 C unless otherwise specified
Parameter
thermal resistance from
junction to ambient
Thermal characteristics
Characteristics
SOT666
SOT363
SOT457
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage
collector capacitance V
emitter capacitance
Rev. 06 — 28 August 2009
…continued
Conditions
V
I
V
I
T
V
I
V
I
V
I
I
I
I
I
I
I
I
I
V
I
V
I
I
f = 1 MHz
V
I
f = 1 MHz
E
E
C
C
C
C
B
C
B
C
B
C
B
C
C
E
C
j
CB
CB
EB
CE
CE
CE
CE
CB
EB
= 0 A
= 0 A;
= 150 C
= 0.5 mA
= 5 mA
= 0.5 mA
= 5 mA
= i
= 0 A
= 10 A
= 2 mA
= 10 mA;
= 100 mA;
= 10 mA;
= 100 mA;
= 2 mA
= 10 mA
= i
Conditions
in free air
= 30 V;
= 30 V;
= 5 V;
= 5 V;
= 5 V;
= 5 V;
= 5 V;
= 10 V;
= 0.5 V;
e
c
= 0 A;
= 0 A;
PNP/PNP matched double transistors
BCM857BV/BS/DS
[1][2]
[1]
[1]
[2]
[2]
[1]
[1]
Min
-
-
-
-
200
-
-
-
-
-
-
-
Min
-
-
-
600
Typ
-
-
-
250
290
-
-
10
Typ
-
-
-
50
200
760
920
650
© NXP B.V. 2009. All rights reserved.
Max
-
450
-
-
2.2
-
Max
416
416
328
15
5
100
200
400
700
760
Unit
K/W
K/W
K/W
Unit
nA
nA
mV
mV
mV
mV
mV
mV
pF
pF
4 of 15
A