TPCP8901(TE85L,F) Toshiba, TPCP8901(TE85L,F) Datasheet - Page 5

• Manufacturer Part Number: TPCP8901(TE85L,F)
• Description: IC TRANS NPN PNP 50V 2-3V1C
• Manufacturer: Toshiba

Specifications of TPCP8901(TE85L,F)

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 1A, 800mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 170mV @ 6mA, 300mA / 200mV @ 10mA, 300mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 400, 200 @ 100mA, 2V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -

Common
1000
100
10
0.001
1
0.01
0.1
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
Single-device operation
Pulse width t
r
th
– t
1
5
w
w
(s)
1.0
0.8
0.6
0.4
0.2
0
0
10
Collector power dissipation at the single-device
operation is 0.83W.
Collector power dissipation at the single-device value at
dual operation is 0.48W.
Collector power dissipation at the dual operation is set
to 0.96W.
Permissible power dissipation for Q1
Permissible Power Dissipation for
0.2
Simultaneous Operation
DC operation
Ta = 25°C
Mounted on an FR4 board glass epoxy,
1.6 mm thick, Cu area: 645 mm
100
0.4
P
C
(W)
1000
0.6
2
)
0.8
2
)
TPCP8901
2004-03-04
1.0