MP4301(Q) Toshiba, MP4301(Q) Datasheet
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MP4301(Q)
Specifications of MP4301(Q)
Related parts for MP4301(Q)
MP4301(Q) Summary of contents
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... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...
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Array Configuration ≈ 4.5 kΩ Marking MP4301 JAPAN Thermal Characteristics Characteristics Thermal resistance from junction to ambient (4-device operation 25°C) Maximum lead temperature for soldering purposes (3.2 mm ...
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Electrical Characteristics Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter Saturation voltage Base-emitter Transition frequency Collector output capacitance Turn-on time Storage time Switching time Fall time Emitter-Collector Diode ...
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I – Common emitter 25° 0. Collector-emitter voltage – ...
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Curves should be applied in thermal limited area. (Single nonrepetitive pulse) 100 The figure shows thermal resistance per device versus pulse width 0.3 0.001 0.01 Safe Operating Area max (pulsed)* 5 ...
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... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • ...