SMBT 3904PN E6327 Infineon Technologies, SMBT 3904PN E6327 Datasheet

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NPN / PNP Silicon Switching Transistor Array High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN / PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 SMBT3904PN SMBT3904UPN ...

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Thermal Resistance Parameter 1) Junction - soldering point SMBT3904PN SMBT3904UPN Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base breakdown voltage µ ...

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Electrical Characteristics at T Parameter AC Characteristics Transition frequency mA 100 MHz C CE Collector-base capacitance MHz CB Emitter-base capacitance V = 0.5 V, ...

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DC current gain normalized 125 - Total power dissipation P SMBT3904PN ...

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Permissible Pulse Load R SMBT3904PN 0.5 0.2 0.1 0.05 0. 0.01 0.005 Permissible Puls Load R thJS SMBT3904UPN ...

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Delay time Rise time Fall ...

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Package Outline 2.9 (2.25 Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel ...

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Package Outline Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = ...

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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...