BCM 856S H6778 Infineon Technologies, BCM 856S H6778 Datasheet - Page 2

• Manufacturer Part Number: BCM 856S H6778
• Description: TRANS ARRAY PNP 65V 100MA SOT363
• Manufacturer: Infineon Technologies

Specifications of BCM 856S H6778

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

Junction - soldering point
DC current gain-
I
I
Collector-emitter saturation voltage
I
I
Base emitter saturation voltage
I
I
Base-emitter voltage-
I
I
1
2
Thermal Resistance
Parameter
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Collector-emitter breakdown voltage
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
Matching
I
I
C
C
C
C
C
C
C
C
C
C
C
E
B
B
For calculation of R
Puls test: t < 300µs; D < 2%
CB
CB
= 10 µA, V
= 2 mA, V
= 10 mA, I
= 100 mA, I
= 10 mA, I
= 100 mA, I
= 2 mA, V
= 10 mA, V
= 10 µA, I
= 1 µA, V
= 100 µA, V
= 10 mA, I
= 10 µA, I
= 10 µA, V
= 30 V, I
= 30 V, I
CE1
CE
CE
E
C
B
B
B
CE
E
E
BE
CE
B
B
= 0 A
= 0 A
= 0.5 mA
= 0.5 mA
= 0 A
= 0 A
= 0 A, T
CE1
= 5 V
= 5 V
= 5 mA
= 5 mA
2)
= 5 V
= V
= 0 A
= 5 V
thJA
= V
CE2
please refer to Application Note Thermal Resistance
2)
CE2
A
= 1.0V
1)
= 150 °C
= 1.0V
2)
A
= 25°C, unless otherwise specified
2)
2
Symbol
R
Symbol
V
V
V
V
I
h
V
V
V
CBO
FE
I
(BR)CEO
(BR)CBO
(BR)CES
(BR)EBO
CEsat
BEsat
BE(ON)
thJS
C
min.
200
600
-10
-10
65
80
80
5
-
-
-
-
-
-
-
-
Values
Value
250
290
250
700
850
650
140
typ.
90
-
-
-
-
-
-
-
-
-
0.015
max.
450
300
650
750
820
BCM856S
10
10
2007-04-27
5
-
-
-
-
-
-
-
K/W
V
µA
Unit
Unit
-
mV
%