NST45010MW6T1G ON Semiconductor, NST45010MW6T1G Datasheet

NST45010MW6T1G

Manufacturer Part Number

NST45010MW6T1G

Description

TRANSISTOR DUAL MATCHED PNP 45V

Manufacturer

ON Semiconductor

Datasheet

1.NST45010MW6T1G.pdf (5 pages)

Specifications of NST45010MW6T1G

Transistor Type

2 PNP (Dual)

Current - Collector (ic) (max)

100mA

Voltage - Collector Emitter Breakdown (max)

45V

Vce Saturation (max) @ Ib, Ic

650mV @ 5mA, 100mA

Dc Current Gain (hfe) (min) @ Ic, Vce

220 @ 2mA, 5V

Power - Max

380mW

Frequency - Transition

100MHz

Mounting Type

Surface Mount

Package / Case

SC-70-6, SC-88, SOT-363

Configuration

Dual

Transistor Polarity

PNP

Mounting Style

SMD/SMT

Collector- Emitter Voltage Vceo Max

45 V

Emitter- Base Voltage Vebo

5 V

Maximum Dc Collector Current

0.1 A

Power Dissipation

380 mW

Maximum Operating Frequency

100 MHz

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NST45010MW6T1G

Manufacturer:

ON Semiconductor

Quantity:

1 850

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NST45010MW6T1G

Manufacturer:

Quantity:

30 000

Company:

H&T Electronics

Part Number:

NST45010MW6T1G

Quantity:

21 000

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NST45010MW6T1G

Dual Matched General

Purpose Transistor

PNP Matched Pair

ideally suited for portable products. They are assembled to create a

pair of devices highly matched in all parameters, eliminating the need

for costly trimming. Applications are Current Mirrors; Differential,

Sense and Balanced Amplifiers; Mixers; Detectors and Limiters.

Complementary NPN equivalent NST45011MW6T1G is available.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 x 0.75 x 0.062 in

October, 2009 − Rev. 1

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Collector −Emitter Voltage

Collector −Base Voltage

Emitter −Base Voltage

Collector Current − Continuous

Total Device Dissipation

Thermal Resistance,

Junction and Storage

These transistors are housed in an ultra−small SOT−363 package

Compliant

Current Gain Matching to 10%

Base−Emitter Voltage Matched to ≤ 2 mV

Drop−In Replacement for Standard Device

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Per Device

FR−5 Board (Note 1)

Derate Above 25°C

Junction to Ambient

Temperature Range

= 25°C

Characteristic

Rating

Symbol

, T

qJA

stg

Symbol

CEO

CBO

EBO

−55 to +150

Max

380

250

328

3.0

Value

−100

−5.0

−45

−50

mW/°C

mAdc

°C/W

Unit

°C

†For information on tape and reel specifications,

NST45010MW6T1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

(Note: Microdot may be in either location)

Device

(3)

(4)

ORDERING INFORMATION

MARKING DIAGRAMS

http://onsemi.com

= Device Code

= Date Code

= Pb−Free Package

CASE 419B

SOT−363

STYLE 1

(Pb−Free)

SOT−363

4F MG

Package

(5)

Publication Order Number:

(2)

NST45010MW6/D

Tape & Reel

Shipping

(1)

(6)

3000 /

†

Related parts for NST45010MW6T1G

NST45010MW6T1G Summary of contents

Page 1

... Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping NST45010MW6T1G SOT−363 3000 / (Pb−Free) Tape & Reel including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage, (I Collector −Emitter Breakdown Voltage, (I Collector −Base Breakdown Voltage Emitter −Base Breakdown Voltage −1.0 mA) E Collector Cutoff Current (V = − Collector Cutoff ...

Page 3

V = - 25°C A 1.0 0.7 0.5 0.3 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 - COLLECTOR CURRENT (mAdc) C Figure 1. Normalized DC Current Gain -2.0 -1.6 -1 ...

Page 4

T = 25° 25° 5.0 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 1.0 5 COLLECTOR-EMITTER VOLTAGE (V) CE Figure 7. Active Region Safe Operating Area ...

Page 5

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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