NST45010MW6T1G ON Semiconductor, NST45010MW6T1G Datasheet - Page 4

• Manufacturer Part Number: NST45010MW6T1G
• Description: TRANSISTOR DUAL MATCHED PNP 45V
• Manufacturer: ON Semiconductor

Specifications of NST45010MW6T1G

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 380mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 380 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

200
100
5.0
2.0
50
10
1.0
Figure 7. Active Region Safe Operating Area
V
CE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
, COLLECTOR-EMITTER VOLTAGE (V)
5.0
T
A
= 25°C
10
T
J
1 s
= 25°C
TYPICAL CHARACTERISTICS
30
45
3 ms
http://onsemi.com
65
100
4
of the transistor that must be observed for reliable
operation. Collector load lines for specific circuits must
fall below the limits indicated by the applicable curve.
or T
The safe operating area curves indicate I
The data of Figure 7 is based upon T
A
is variable depending upon conditions.
J(pk)
C
= 150°C; T
−V
CE
limits
C