NST3906DXV6T1 ON Semiconductor, NST3906DXV6T1 Datasheet - Page 3

• Manufacturer Part Number: NST3906DXV6T1
• Description: TRANS PNP DUAL 200MA 40V SOT563
• Manufacturer: ON Semiconductor

Specifications of NST3906DXV6T1

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 500mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: NST3906DXV6T1OS

+0.5 V
10.6 V
500
300
200
100
70
50
30
20
10
7
5
1.0
2.0 3.0
< 1 ns
DUTY CYCLE = 2%
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 4. Turn - On Time
I
C
300 ns
, COLLECTOR CURRENT (mA)
5.0 7.0
10
10 k
t
d
7.0
5.0
3.0
2.0
1.0
10
@ V
0.1
20
TYPICAL TRANSIENT CHARACTERISTICS
OB
NST3906DXV6T1, NST3906DXV6T5
= 0 V
30
t
r
0.2 0.3 0.5 0.7
@ V
* Total shunt capacitance of test jig and connectors
3 V
50
CC
= 3.0 V
70
275
I
C
C
Figure 3. Capacitance
/I
100
B
s
< 4 pF*
http://onsemi.com
REVERSE BIAS (VOLTS)
= 10
2.0 V
15 V
40 V
1.0
200
C
C
obo
ibo
DUTY CYCLE = 2%
2.0 3.0
3
10 < t
T
T
J
J
= 25 C
= 125 C
1
500
300
200
100
30
20
10
70
50
< 500 ms
7
5
5.0 7.0 10
1.0
+9.1 V
0
2.0 3.0
t
1
20 30 40
Figure 2. Storage and Fall Time
I
C
10.9 V
, COLLECTOR CURRENT (mA)
5.0 7.0
Figure 5. Fall Time
< 1 ns
Equivalent Test Circuit
10
I
1N916
C
10 k
/I
B
= 10
20
I
C
/I
B
30
= 20
50
3 V
V
I
70
B1
CC
= I
100
= 40 V
275
B2
C
s
< 4 pF*
200