IMH3AT110 Rohm Semiconductor, IMH3AT110 Datasheet
IMH3AT110
Manufacturer Part Number
IMH3AT110
Description
TRANS DUAL NPN 50V 100MA SOT-457
Manufacturer
Rohm Semiconductor
Datasheet
1.IMH3AT110.pdf
(3 pages)
Specifications of IMH3AT110
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 250µA, 5mA
Frequency - Transition
250MHz
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-74-6
Module Configuration
Dual
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
250MHz
Power Dissipation Pd
300mW
Dc Collector Current
100mA
Operating Temperature
RoHS Compliant
Dc Current Gain Hfe
250
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Resistor - Emitter Base (r2) (ohms)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IMH3AT110
IMH3AT110TR
IMH3AT110TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IMH3AT110
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
General purpose (dual digital transistors)
EMH3 / UMH3N / IMH3A
1) Two DTAK13Ts chips in a EMT or UMT or SMT
2) Mounting possible with EMT3 or UMT3 or SMT3
3) Transistor elements are independent, eliminating
Epitaxial planar type
NPN silicon transistor
The following characteristics apply to both DTr
Type
EMH3
UMH3N
IMH3A
Features
Structure
Equivalent circuit
Packaging specifications
EMH3 / UMH3N
package.
automatic mounting machines.
interference.
DTr
2
R
(3)
(4)
1
R
=4.7kΩ
1
(2)
(5)
R
Package
Code
Basic ordering
unit (pieces)
1
DTr
(1)
(6)
1
IMH3A
DTr
2
(4)
(3)
R
R
1
=4.7kΩ
1
8000
T2R
(5)
R
(2)
1
−
−
DTr
(6)
(1)
1
Taping
3000
TN
−
−
1
and DTr
T110
3000
−
−
2
.
External dimensions (Unit : mm)
EMH3
UMH3N
ROHM : EMT6
ROHM : UMT6
EIAJ : SC-88
IMH3A
ROHM : SMT6
EIAJ : SC-74
EMH3 / UMH3N / IMH3A
Abbreviated symbol : H3
Abbreviated symbol : H3
0.3to0.6
0.1Min.
Abbreviated symbol : H3
( 4 )
( 5 )
( 6 )
1.25
2.1
1.2
1.6
1.6
2.8
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
( 3 )
( 2 )
( 1 )
Rev.A
1/2
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IMH3AT110 Summary of contents
Page 1
Transistors General purpose (dual digital transistors) EMH3 / UMH3N / IMH3A Features 1) Two DTAK13Ts chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are ...
Page 2
Transistors Absolute maximum ratings (Ta = 25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector EMH3,UMH3N power IMH3A dissipation Junction temperature Storage temperature ∗ 1 120mW per element must not be exceeded. ∗ 2 200mW per element ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...