UMA9NTR Rohm Semiconductor, UMA9NTR Datasheet
UMA9NTR
Manufacturer Part Number
UMA9NTR
Description
TRANS DUAL PNP 50V 50MA SOT-353
Manufacturer
Rohm Semiconductor
Datasheet
1.UMA9NTR.pdf
(3 pages)
Specifications of UMA9NTR
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
Module Configuration
Dual
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
250MHz
Power Dissipation Pd
150mW
Dc Collector Current
-100mA
Operating Temperature
RoHS Compliant
Dc Current Gain Hfe
30
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UMA9NTR
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Digital transistor
(Common Emitter Dual Transistors)
UMA9N / FMA9N
1) Two DTA114E chips in UMT and
2) Mounting cost and area can be
Epitaxial planar type
PNP silicon transistor
(Built-in resistor type)
The following characteristics apply
to both DTr
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Features
Structure
Absolute maximum ratings (Ta=25°C)
Supply voltage
Input voltage
Output current
Power
dissipation
Junction temperature
Storage temperature
SMT packages.
cut in half.
Parameter
1
and DTr
UMA9N
FMA9A
2
.
Symbol
I
C (MAX.)
Tstg
V
V
Pd
I
Tj
CC
O
IN
External dimensions (Unit : mm)
All terminals have same
dimensions.
(3)
(4)
UMA9N
ROHM : UMT5
EIAJ : SC-88A
DTr
0.65
150 (TOTAL)
300 (TOTAL)
1.3±0.1
2.0±0.2
−55 to +150
R
2
(2)
0.2
1
(4)
0.65
Limits
(3)
−100
−0.05
+0.1
(1)
(6)
−50
−40
−50
150
R
2
10
(2)
R
2
(6)
(1)
R
DTr
0.15±0.05
1
R
R
1
1
2
= 10kΩ
= 10kΩ
0.9±0.1
Unit
mW
mA
°C
°C
0.7
V
V
0~0.1
Abbreviated symbol: A9
∗
∗
1
2
All terminals have same
dimensions.
ROHM : SMT5
EIAJ : SC-74A
FMA9A
0.95 0.95
2.9±0.2
1.9±0.2
(3)
(2)
0.3 +0.1
−0.05
(4)
DTr
UMA9N / FMA9A
R
(5)
(1)
2
1
(2)
(3)
R
2
Rev.A
(4)
0.15
R
2
(1)
+0.1
−0.06
(5)
R
DTr
1.1 +0.2
1
0.8±0.1
R
R
−0.1
1
1
2
= 10kΩ
= 10kΩ
0~0.1
1/2
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UMA9NTR Summary of contents
Page 1
Transistors Digital transistor (Common Emitter Dual Transistors) UMA9N / FMA9N Features 1) Two DTA114E chips in UMT and SMT packages. 2) Mounting cost and area can be cut in half. Structure Epitaxial planar type PNP silicon transistor (Built-in resistor type) ...
Page 2
Transistors Electrical characteristics (Ta=25°C) Parameter Symbol V I (off) Input voltage V I (on) V Output voltage O (on) Input current I I Output current I O (off current gain I Transition frequency f T Input resistance R ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...