UMB9NTN Rohm Semiconductor, UMB9NTN Datasheet
UMB9NTN
Manufacturer Part Number
UMB9NTN
Description
TRANS DUAL PNP 50V 70MA SOT-428
Manufacturer
Rohm Semiconductor
Datasheet
1.UMB9NTN.pdf
(2 pages)
Specifications of UMB9NTN
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
68 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
UMB9NTN
UMB9NTNTR
UMB9NTNTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UMB9NTN
Manufacturer:
ROHM
Quantity:
2 392
Transistors
General purpose
(dual digital transistors)
EMB9 / UMB9N / IMB9A
1) Two DTA144Ys in a EMT or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
3) Transistor elements are independent, eliminating
4) Mounting cost and area can be cut in half.
Epitaxial planar type
PNP silicon transistor (Built-in resistor type)
The following characteristics apply to both DTr
DTr
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Supply voltage
Input voltage
Output current
Power
dissipation
Junction temperature
Storage temperature
Features
Structure
Equivalent circuit
Absolute maximum ratings (Ta = 25°C)
automatic mounting machines.
interference.
EMB9 / UMB9N
2
.
R
R
1
2
=10k
=47k
Parameter
EMB9, UMB9N
IMB9A
DTr
2
(3)
(4)
R
R
2
1
(2)
(5)
R
R
1
2
DTr
(1)
(6)
1
Symbol
I
C (Max.)
Tstg
V
V
Pd
Tj
I
CC
IMB9A
O
IN
DTr
2
(4)
(3)
R
R
150 (TOTAL)
300 (TOTAL)
2
1
55 to 150
(5)
R
(2)
Limits
R
1
150
2
100
50
40
6
70
DTr
(6)
(1)
1
R
R
1
2
=10k
=47k
1
and
Unit
mW
mA
˚C
˚C
V
V
1
2
External dimensions (Unit : mm)
EMB9
ROHM : EMT6
UMB9N
ROHM : UMT6
EIAJ : SC-88
ROHM : SMT6
EIAJ : SC-74
IMB9A
0.3to0.6
EMB9 / UMB9N / IMB9A
0.1Min.
Abbreviated symbol : B9
Abbreviated symbol : B9
Abbreviated symbol : B9
( 4 )
( 5 )
( 6 )
1.6
2.8
1.25
1.2
1.6
2.1
Each lead has same dimensions
Each lead has same dimensions
( 3 )
( 2 )
( 1 )
Each lead has same dimensions
1/2
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UMB9NTN Summary of contents
Page 1
Transistors General purpose (dual digital transistors) EMB9 / UMB9N / IMB9A Features 1) Two DTA144Ys in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, ...
Page 2
Transistors Electrical characteristics (Ta = 25°C) Parameter Symbol Min (off) Input voltage V 1.4 I (on) V Output voltage O (on) I Input current I I Output current O (off) DC current gain Transition ...