UMH6NTR Rohm Semiconductor, UMH6NTR Datasheet
UMH6NTR
Manufacturer Part Number
UMH6NTR
Description
TRANS DUAL NPN 50V 30MA SOT-363
Manufacturer
Rohm Semiconductor
Datasheet
1.UMH6NTR.pdf
(3 pages)
Specifications of UMH6NTR
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
47K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
68 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Module Configuration
Dual
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
250MHz
Power Dissipation Pd
150mW
Dc Collector Current
100mA
Operating Temperature
RoHS Compliant
Dc Current Gain Hfe
68
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UMH6NTR
Manufacturer:
ROHM
Quantity:
3 000
Company:
Part Number:
UMH6NTR
Manufacturer:
JRC
Quantity:
1 700
Part Number:
UMH6NTR
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
General purpose (dual digital transistors)
EMH6 / UMH6N / IMH6A
1) Two DTC144E chips in a EMT or UMT or SMT
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
∗Transition frequency of the device.
Supply voltage
Input voltage
Output current
COLLECTOR CURRENT
Power dissipation
Junction temperature
Storage temperature
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Features
Equivalent circuit
Package, marking, and packaging specifications
Absolute maximum ratings (Ta = 25°C)
Electrical characteristics (Ta = 25°C)
EMH6 / UMH6N
package.
Basic ordering unit (pieces)
(3)
R
R
1
2
DTr
(4) (5)
(2)
Package
2
Marking
Parameter
Code
Type
R
R
Parameter
1
EMH6 / UMH6N
IMH6A
2
DTr
(1)
(6)
1
IMH6A
(4)
R
R
1
2
DTr
Symbol
(3) (2)
(5)
I
C(MAX)
Tstg
V
EMH6
EMT6
V
Pd
8000
Tj
2
I
T2R
CC
O
IN
H6
R
R
1
2
DTr
(6)
(1)
150(TOTAL)
300(TOTAL)
−55 to +150
1
Limits
−10
100
150
UMH6N
50
40
30
UMT6
R
R
3000
Symbol
H6
TR
R
1
2
V
V
V
I
=47kΩ
=47kΩ
O (off)
2
O (on)
R
G
I (off)
I (on)
f
I
/ R
T
I
1
I
1
IMH6A
SMT6
T108
3000
Unit
mW
mA
mA
°C
°C
H6
V
V
Min.
32.9
∗1
∗2
0.8
68
−
3
−
−
−
−
Typ.
250
0.1
47
−
−
−
−
−
1
External dimensions (Unit : mm)
EMH6
ROHM : EMT6
UMH6N
ROHM : UMT6
EIAJ : SC-88
IMH6A
ROHM : SMT6
EIAJ : SC-74
Max.
0.18
61.1
0.5
0.3
0.5
1.2
−
−
−
EMH6 / UMH6N / IMH6A
MHz
Unit
mA
µA
kΩ
V
V
−
−
0.3to0.6
0.1Min.
V
V
I
V
V
I
V
O
O
CC
O
I
CC
CE
( 4 )
( 5 )
( 6 )
/I
=5V
/V
=0.3V, I
I
=10mA/0.5mA
=10V, I
=5V, I
=50V, V
O
1.25
1.6
2.8
1.2
1.6
2.1
=5mA/5V
( 3 )
( 2 )
( 1 )
O
O
=100µA
E
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
=2mA
I
=−5mA, f=100MHz
=0V
Conditions
−
−
Rev.A
∗
1/2
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UMH6NTR Summary of contents
Page 1
Transistors General purpose (dual digital transistors) EMH6 / UMH6N / IMH6A Features 1) Two DTC144E chips in a EMT or UMT or SMT package. Equivalent circuit EMH6 / UMH6N IMH6A (3) (2) (1) (4) ( ...
Page 2
Transistors Electrical characteristics curves 100 =0. Ta=−40°C 25°C 5 100° 500m 200m 100m 100µ 200µ 500µ 10m 20m 50m 100m (A) OUTPUT CURRENT : I O Fig.1 Input voltage vs. ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...