UMB10NTN Rohm Semiconductor, UMB10NTN Datasheet
UMB10NTN
Manufacturer Part Number
UMB10NTN
Description
TRANS DUAL PNP 50V 100MA SOT-363
Manufacturer
Rohm Semiconductor
Datasheet
1.UMB10NTN.pdf
(3 pages)
Specifications of UMB10NTN
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Module Configuration
Dual
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
250MHz
Power Dissipation Pd
150mW
Dc Collector Current
-100mA
Operating Temperature
RoHS Compliant
Dc Current Gain Hfe
80
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
UMB10NTNTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UMB10NTN
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
General purpose
(dual digital transistors)
EMB10 / UMB10N / IMB10A
1) Two DTA123J chips in a EMT or UMT or SMT
2) Mounting possible with EMT3 or UMT3 or SMT3
3) Transistor elements are independent, eliminating
4) Mounting cost and area can be cut in half.
Epitaxial planar type
PNP silicon transistor (Built-in resistor type)
The following characteristics apply to both DTr
DTr
∗
∗
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Features
Structure
Equivalent circuit
Supply voltage
Input voltage
Output current
Power
dissipation
Junction temperature
Storage temperature
Absolute maximum ratings (Ta = 25°C)
package.
automatic mounting machines.
interference.
EMB10 / UMB10N
2
R
.
R
1
2
=2.2kΩ
=47kΩ
Parameter
EMB10, UMB10N
IMB10A
DTr
2
(3)
(4)
R
R
2
1
(2)
(5)
R
R
1
2
DTr
(1)
(6)
1
Symbol
I
IMB10A
C (Max.)
Tstg
DTr
V
V
Pd
I
Tj
CC
O
IN
2
(4)
(3)
R
R
2
1
150 (TOTAL)
300 (TOTAL)
−55 to +150
(5)
R
(2)
R
1
2
Limits
−100
−100
DTr
−50
−12
150
(6)
(1)
5
R
1
R
1
2
=2.2kΩ
=47kΩ
1
and
Unit
mW
mA
˚C
˚C
V
V
∗
∗
1
2
Dimensions (Unit : mm)
EMB10
ROHM : EMT6
UMB10N
ROHM : UMT6
EIAJ : SC-88
IMB10A
ROHM : SMT6
EIAJ : SC-74
EMB10 / UMB10N / IMB10A
(4)
(3)
(6) (5) (4)
(1) (2) (3)
(6) (5) (4)
(1) (2) (3)
Abbreviated symbol : B10
Abbreviated symbol : B10
Abbreviated symbol : B10
(2)
(5)
(6)
(1)
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
Rev.C
1/2
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UMB10NTN Summary of contents
Page 1
Transistors General purpose (dual digital transistors) EMB10 / UMB10N / IMB10A Features 1) Two DTA123J chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are ...
Page 2
Transistors Electrical characteristics (Ta = 25°C) Parameter Symbol Min. − (off) Input voltage −1 (on) − Output voltage V O (on) − Input current I I − Output current I O (off) DC current gain G ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...