UMH4NTN Rohm Semiconductor, UMH4NTN Datasheet
UMH4NTN
Manufacturer Part Number
UMH4NTN
Description
TRANS DUAL NPN 50V 100MA SOT-363
Manufacturer
Rohm Semiconductor
Datasheet
1.UMH4NTN.pdf
(3 pages)
Specifications of UMH4NTN
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 1mA, 10mA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Module Configuration
Dual
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
250MHz
Power Dissipation Pd
150mW
Dc Collector Current
100mA
Operating Temperature
RoHS Compliant
Dc Current Gain Hfe
250
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Resistor - Emitter Base (r2) (ohms)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
UMH4NTN
UMH4NTNTR
UMH4NTNTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UMH4NTN
Manufacturer:
ROHM
Quantity:
3 000
Company:
Part Number:
UMH4NTN
Manufacturer:
SAMYOUNG
Quantity:
2 028
Part Number:
UMH4NTN
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
General purpose (dual digital transistors)
EMH4 / UMH4N / IMH4A
1) Two DTC114T chips in a EMT or UMT or SMT
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
Features
Equivalent circuits
Package, marking, and packaging specifications
Basic ordering unit (pieces)
Absolute maximum ratings (Ta=25 C)
package.
(3)
(4)
EMH4 / UMH4N
R
R
1
=10KΩ
1
Package
Marking
(2)
(5)
Code
Type
R
1
(1)
(6)
Parameter
EMH4 / UMH4N
IMH4A
(4)
(3)
IMH4A
R
R
1
=10KΩ
1
(2)
(5)
EMH4
R
EMT5
8000
T2R
1
H4
(1)
(6)
Symbol
UMH4N
V
V
V
UMT6
Tstg
3000
Pd
Tj
CBO
CEO
EBO
I
TN
C
H4
150(TOTAL)
300(TOTAL)
−55 to +150
Limits
100
150
50
50
IMH4A
5
SMT6
T110
3000
H4
Unit
mW
mA
°C
°C
V
V
V
∗1
∗2
External dimensions (Unit : mm)
EMH4
ROHM : EMT6
UMH4N
ROHM : UMT6
EIAJ : SC-88
IMH4A
ROHM : SMT6
EIAJ : SC-74
EMH4 / UMH4N / IMH4A
0.3Min.
0.1Min.
( 4 )
( 5 )
( 6 )
1.6
2.8
1.25
2.1
1.2
1.6
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
( 3 )
( 2 )
( 1 )
1pin mark
Rev.A
1/2
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UMH4NTN Summary of contents
Page 1
Transistors General purpose (dual digital transistors) EMH4 / UMH4N / IMH4A Features 1) Two DTC114T chips in a EMT or UMT or SMT package. Equivalent circuits EMH4 / UMH4N IMH4A (3) (2) (1) (4) (5) ( ...
Page 2
Transistors Electrical characteristics (Ta=25 C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Input resistance ∗Transition frequency of the device. Electrical characteristics curves ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...