EMD9T2R Rohm Semiconductor, EMD9T2R Datasheet - Page 2

• Manufacturer Part Number: EMD9T2R
• Description: TRANS PNP/NPN 50V 70MA EMT6
• Manufacturer: Rohm Semiconductor

Specifications of EMD9T2R

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Module Configuration: Dual
• Transistor Polarity: NPN / PNP
• Collector Emitter Voltage V(br)ceo: 50V
• Gain Bandwidth Ft Typ: 250MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: 100mA
• Operating: RoHS Compliant
• Dc Current Gain Hfe: 68
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: EMD9T2R; EMD9T2RTR

Electrical characteristics curves DTr1 (DTC114Y)
○
EMD9 / UMD9N / IMD9A
c
www.rohm.com
Fig.1 Input voltage vs. output current
−500m
−200m
−100m
−500m
−200m
−100m
−50m
−20m
−10m
−100
−5m
−2m
−1m
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−50
−20
−10
−100μ
−100μ
−5
−2
−1
−1
Fig.4 Output voltage vs. output
−200μ
−200μ
(ON characteristics)
Ta=−40°C
OUTPUT CURRENT : I
OUTPUT CURRENT : I
−500μ
−500μ
current
100°C
25°C
−1m
−1m
−2m
−2m
Ta=100°C
−40°C
25°C
−5m
−5m
−10m
−10m
O
O
−20m
−20m
(A)
(A)
V
l
O
O
=−0.3V
/l
I
−50m
=20
−50m
−100m
−100m
Fig.2 Output current vs. input voltage
−500μ
−200μ
−100μ
−10m
−50μ
−20μ
−10μ
−5m
−2m
−1m
−1μ
−5μ
−2μ
0
(OFF characteristics)
−0.5
INPUT VOLTAGE : V
−1.0
Ta=100°C
−1.5
−40°C
25°C
2/3
−2.0
I(off)
(V)
V
−2.5
CC
=−5V
−3.0
500
200
100
50
20
10
1k
−100μ
5
2
1
Fig.3 DC current gain vs. output
−200μ
OUTPUT CURRENT : I
−500μ
current
Ta=100°C
−1m
−40°C
25°C
−2m
−5m
2010.01 - Rev.D
−10m
O
−20m
(A)
Data Sheet
V
O
=−5V
−50m
−100m