UMH14NTR Rohm Semiconductor, UMH14NTR Datasheet
UMH14NTR
Manufacturer Part Number
UMH14NTR
Description
TRANS DUAL NPN 50V 100MA SOT-363
Manufacturer
Rohm Semiconductor
Datasheet
1.UMH14NTR.pdf
(3 pages)
Specifications of UMH14NTR
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 1mA, 10mA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Resistor - Emitter Base (r2) (ohms)
-
Transistors
General purpose (dual digital transistors)
UMH14N / IMH14A
1) Two DTC144T chips in a UMT or SMT package.
∗Transition frequency of the device.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Collector-emitter breakdown voltage
Transition frequency
Basic ordering unit (pieces)
Features
Equivalent circuit
Package, marking, and packaging specifications
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
UMH14N
(3)
R
1
(2)
(4) (5)
Package
Marking
Code
Type
R
Parameter
1
(6)
(1)
Parameter
IMH14A
(4)
UMH14N
R
IMH14A
1
UMH14N
(5)
(3) (2)
UMT6
3000
H14
TR
R
1
Symbol
(1)
(6)
V
V
V
Tstg
Pc
CBO
CEO
I
Tj
EBO
C
IMH14A
SMT6
T108
3000
H14
150(TOTAL)
300(TOTAL)
−55 to +150
Symbol
BV
BV
V
BV
Limits
I
I
100
150
CE(sat)
h
CBO
50
50
EBO
R
f
5
FE
CBO
CEO
EBO
T
1
Unit
mW
mA
Min.
32.9
°C
°C
100
V
V
V
50
50
5
−
−
−
−
Typ.
250
250
47
−
−
−
−
−
−
External dimensions (Unit : mm)
UMH14N
ROHM : UMT6
EIAJ : SC-88
IMH14A
ROHM : SMT6
EIAJ : SC-74
Max.
61.1
600
0.5
0.5
0.3
−
−
−
−
MHz
Unit
kΩ
µA
µA
V
V
V
V
−
0.3Min.
0.1Min.
I
I
I
V
V
I
V
V
C
C
E
C
CB
EB
CE
CE
=50µA
=1mA
=50µA
/I
UMH14N / IMH14A
B
=50V
=4V
/I
=10V, I
1.25
=10mA/1mA
1.6
2.8
2.1
C
=5V/1mA
Each lead has same dimensions
Each lead has same dimensions
E
= −5mA, f=100MHz
Conditions
−
Rev.A
∗
1/2
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UMH14NTR Summary of contents
Page 1
Transistors General purpose (dual digital transistors) UMH14N / IMH14A Features 1) Two DTC144T chips in a UMT or SMT package. Equivalent circuit UMH14N IMH14A (3) (2) (1) (4) (5) ( (4) (5) ...
Page 2
Transistors Electrical characteristics curves 500 200 Ta=100°C 100 25°C −40° 100µ 200µ 500µ 10m 20m 50m 100m (A) COLLECTOR CURRENT : I C Fig.1 DC current ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...