NSBC114EDXV6T1G ON Semiconductor, NSBC114EDXV6T1G Datasheet - Page 4

• Manufacturer Part Number: NSBC114EDXV6T1G
• Description: TRANS BRT NPN DUAL 50V SOT563
• Manufacturer: ON Semiconductor

Specifications of NSBC114EDXV6T1G

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: NSBC114EDXV6T1GOS; NSBC114EDXV6T1GOS; NSBC114EDXV6T1GOSTR

NSBC114EDXV6T1, NSBC114EDXV6T5
300
250
200
150
100
R
= 833°C/W
50
qJA
0
−50
0
50
100
150
T
, AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve
http://onsemi.com
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