NSBC114EDXV6T1G ON Semiconductor, NSBC114EDXV6T1G Datasheet - Page 7

TRANS BRT NPN DUAL 50V SOT563

NSBC114EDXV6T1G

Manufacturer Part Number
NSBC114EDXV6T1G
Description
TRANS BRT NPN DUAL 50V SOT563
Manufacturer
ON Semiconductor
Datasheet

Specifications of NSBC114EDXV6T1G

Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
35 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Other names
NSBC114EDXV6T1GOS
NSBC114EDXV6T1GOS
NSBC114EDXV6T1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NSBC114EDXV6T1G
Quantity:
8 189
0.01
0.1
0.8
0.6
0.4
0.2
10
1
0
1
0
0
I
C
/I
B
= 10
10
Figure 14. Output Capacitance
V
Figure 12. V
R
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
TYPICAL ELECTRICAL CHARACTERISTICS — NSBC144EDXV6T1
20
20
CE(sat)
100
0.1
10
1
NSBC114EDXV6T1, NSBC114EDXV6T5
T
0
A
Figure 16. Input Voltage versus Output Current
30
= −25°C
versus I
V
O
= 0.2 V
10
C
40
f = 1 MHz
I
T
E
40
A
= 0 V
I
= 25°C
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
75°C
25°C
20
50
50
7
T
0.001
A
30
1000
0.01
100
100
= −25°C
0.1
10
10
1
1
0
Figure 15. Output Current versus Input Voltage
40
75°C
25°C
75°C
2
Figure 13. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
V
in
50
, INPUT VOLTAGE (VOLTS)
25°C
4
10
T
A
= −25°C
6
V
O
= 5 V
T
A
V
8
= 75°C
CE
= 10 V
25°C
−25°C
100
10

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