EMC5DXV5T1G ON Semiconductor, EMC5DXV5T1G Datasheet - Page 6

• Manufacturer Part Number: EMC5DXV5T1G
• Description: TRANS BR NPN/PNP DUAL 50V SOT553
• Manufacturer: ON Semiconductor

Specifications of EMC5DXV5T1G

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K, 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K, 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-553, SOT-5
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Resistor Ratio, R1 / R2: 0.47
• Rf Transistor Case: SOT-553
• No. Of Pins: 5
• Dc Collector Current: 100mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: EMC5DXV5T1GOSTR

0.01
0.1
1
4
3
2
1
0
0
0
I
C
/I
B
= 10
TYPICAL ELECTRICAL CHARACTERISTICS − EMC3DXV5T1 PNP TRANSISTOR
10
Figure 14. Output Capacitance
Figure 12. V
V
20
I
C
R
, COLLECTOR CURRENT (mA)
, REVERSE BIAS VOLTAGE (V)
20
CE(sat)
100
0.1
10
1
0
T
30
A
versus I
75°C
= -25°C
V
O
Figure 16. Input Voltage versus Output
= 0.2 V
40
10
C
f = 1 MHz
l
T
E
40
A
= 0 mA
= 25°C
I
C
, COLLECTOR CURRENT (mA)
25°C
http://onsemi.com
20
50
Current
50
6
0.001
T
1000
0.01
30
100
A
100
0.1
10
10
= -25°C
1
75°C
1
0
Figure 15. Output Current versus Input
1
75°C
25°C
40
2
Figure 13. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
T
3
V
50
A
25°C
in
= -25°C
, INPUT VOLTAGE (V)
4
Voltage
10
5
6
V
O
7
= 5 V
V
8
T
CE
A
= 75°C
= 10 V
-25°C
9
25°C
100
10