EMC5DXV5T1G ON Semiconductor, EMC5DXV5T1G Datasheet - Page 9

• Manufacturer Part Number: EMC5DXV5T1G
• Description: TRANS BR NPN/PNP DUAL 50V SOT553
• Manufacturer: ON Semiconductor

Specifications of EMC5DXV5T1G

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K, 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K, 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-553, SOT-5
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Resistor Ratio, R1 / R2: 0.47
• Rf Transistor Case: SOT-553
• No. Of Pins: 5
• Dc Collector Current: 100mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: EMC5DXV5T1GOSTR

0.01
0.1
12
10
1
8
6
4
0
2
0
0
I
C
5
/I
TYPICAL ELECTRICAL CHARACTERISTICS − EMC5DXV5T1 PNP TRANSISTOR
B
10
= 10
Figure 30. Output Capacitance
Figure 28. V
10
I
V
C
R
, COLLECTOR CURRENT (mA)
, REVERSE BIAS VOLTAGE (V)
20
15
20
CE(sat)
30
SERIES 1
25
versus I
T
40
A
30
= 75°C
-25°C
C
f = 1 MHz
I
T
E
35
A
= 0 mA
= 25°C
50
25°C
http://onsemi.com
40
60
45
9
1000
0.01
100
100
0.1
10
10
1
1
1
0
Figure 31. Output Current versus Input Voltage
75°C
V
CE
T
A
= 10 V
= -25°C
2
25°C
Figure 29. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
V
10
4
in
, INPUT VOLTAGE (V)
T
A
= 75°C
-25°C
6
100
8
25°C
V
10
O
= 5 V
1000
12