MT46H16M16LFBF-6 IT:H Micron Technology Inc, MT46H16M16LFBF-6 IT:H Datasheet - Page 48
MT46H16M16LFBF-6 IT:H
Manufacturer Part Number
MT46H16M16LFBF-6 IT:H
Description
DRAM Chip DDR SDRAM 256M-Bit 16Mx16 1.8V 60-Pin VFBGA Tray
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46H16M16LFBF-6_ITH.pdf
(96 pages)
Specifications of MT46H16M16LFBF-6 IT:H
Density
256 Mb
Maximum Clock Rate
166 MHz
Package
60VFBGA
Address Bus Width
15 Bit
Operating Supply Voltage
1.8 V
Maximum Random Access Time
6.5|5 ns
Operating Temperature
-40 to 85 °C
Organization
16Mx16
Address Bus
15b
Access Time (max)
6.5/5ns
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
100mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
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Figure 16: Alternate Initialization with CKE LOW
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Command
V
V
DDQ
CK#
CKE
CK
DD
1
LOW level
LVCMOS
Notes:
Power up: V
NOP
T = 200µs
2
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1. PRE = PRECHARGE command; LMR = LOAD MODE REGISTER command; AR = AUTO RE-
2. NOP or DESELECT commands are required for at least 200μs.
3. Other valid commands are possible.
DD
and CK stable
t IS
t IS
FRESH command; ACT = ACTIVE command.
NOP
T0
t IH
t CH
t CL
PRE
T1
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AR
Ta0
48
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256Mb: x16, x32 Mobile LPDDR SDRAM
Tb0
AR
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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LMR
Tc0
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LMR
Td0
©2008 Micron Technology, Inc. All rights reserved.
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ACT
Te0
Initialization
3
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Don’t Care
NOP
Tf0
3
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