MT46V16M16CY-5B:K TR Micron Technology Inc, MT46V16M16CY-5B:K TR Datasheet - Page 40
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MT46V16M16CY-5B:K TR
Manufacturer Part Number
MT46V16M16CY-5B:K TR
Description
DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.6V 60-Pin FBGA T/R
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46V16M16CY-5BK_TR.pdf
(93 pages)
Specifications of MT46V16M16CY-5B:K TR
Package
60FBGA
Density
256 Mb
Address Bus Width
15 Bit
Operating Supply Voltage
2.6 V
Maximum Clock Rate
400 MHz
Maximum Random Access Time
0.7 ns
Operating Temperature
0 to 70 °C
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
256M (16Mx16)
Speed
5ns
Interface
Parallel
Voltage - Supply
2.5 V ~ 2.7 V
Package / Case
60-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1445-2
Figure 13:
Figure 14:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
Full Drive Pull-Down Characteristics
Full Drive Pull-Up Characteristics
39. Reduced output drive curves:
38d. The driver pull-up current variation within nominal limits of voltage and temper-
39b. The driver pull-down current variation, within nominal voltage and temperature
38c. The full driver pull-up current variation from MIN to MAX process; temperature
38e. The full ratio variation of MAX to MIN pull-up and pull-down current should be
39a. The full driver pull-down current variation from MIN to MAX process; tempera-
39c. The full driver pull-up current variation from MIN to MAX process; temperature
38f. The full ratio variation of the nominal pull-up to pull-down current should be
-100
-120
-140
-160
-180
-200
160
140
120
100
-2 0
-4 0
-6 0
-8 0
80
60
40
20
0
0
0.0
0. 0
and voltage will lie within the outer bounding lines of the V-I curve of Figure 14 on
page 38.
ature is expected, but not guaranteed, to lie within the inner bounding lines of the
V-I curve of Figure 14 on page 38.
between 0.71 and 1.4 for drain-to-source voltages from 0.1V to 1.0V at the same
voltage and temperature.
unity ±10% for device drain-to-source voltages from 0.1V to 1.0V.
ture and voltage will lie within the outer bounding lines of the V-I curve of
Figure 15 on page 39.
limits, is expected, but not guaranteed, to lie within the inner bounding lines of
the V-I curve of Figure 15 on page 39.
and voltage will lie within the outer bounding lines of the V-I curve of Figure 16.
0.5
0 . 5
1. 0
1.0
V
DD
V
Q - V
OUT
38
(V)
OUT
(V)
1 . 5
1.5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
2. 0
2.0
256Mb: x4, x8, x16 DDR SDRAM
2 . 5
2.5
©2003 Micron Technology, Inc. All rights reserved.