MT46V16M16CY-5B:K TR Micron Technology Inc, MT46V16M16CY-5B:K TR Datasheet - Page 81

• Manufacturer Part Number: MT46V16M16CY-5B:K TR
• Description: DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.6V 60-Pin FBGA T/R
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V16M16CY-5B:K TR

• Package: 60FBGA
• Density: 256 Mb
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 2.6 V
• Maximum Clock Rate: 400 MHz
• Maximum Random Access Time: 0.7 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1445-2

Figure 44:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
Command
t DQSS (NOM)
t DQSS (MIN)
t DQSS (MAX)
Address
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
WRITE-to-READ – Odd Number of Data, Interrupting
Notes:
Bank a,
WRITE
Col b
T0
t DQSS
t DQSS
t DQSS
1. DI b = data-in for column b; DO n = data-out for column n.
2. An interrupted burst of 4 is shown; one data element is written.
3.
4. A10 is LOW with the WRITE command (auto precharge is disabled).
5. DQS is required at T1n, T2, and T2n (nominal case) to register DM.
6. If the burst of 8 is used, DM and DQS are required at T3–T3n because the READ command
t
the last two data elements).
will not mask these data elements.
DI
b
WTR is referenced from the first positive CK edge after the last desired data-in pair (not
NOP
DI
T1
b
DI
b
T1n
NOP
T2
t WTR
T2n
79
Bank a,
READ
Col n
T3
T3n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CL = 2
CL = 2
CL = 2
NOP
T4
256Mb: x4, x8, x16 DDR SDRAM
Transitioning Data
T5
NOP
©2003 Micron Technology, Inc. All rights reserved.
DO
DO
DO
n
n
n
T5n
T6
NOP
Operations
Don’t Care
T6n