MT47H256M8EB-25E IT:C Micron Technology Inc, MT47H256M8EB-25E IT:C Datasheet - Page 12

• Manufacturer Part Number: MT47H256M8EB-25E IT:C
• Description: 256MX8 DDR2 SDRAM PLASTIC PBF FBGA 1.8V
• Manufacturer: Micron Technology Inc

Specifications of MT47H256M8EB-25E IT:C

• Lead Free Status / RoHS Status: Compliant

Functional Block Diagrams
Figure 3: Functional Block Diagram – 512 Meg x 4
PDF: 09005aef824f87b6
2gbddr2.pdf – Rev. E 06/10 EN
BA0–BA2
A0–A14,
RAS#
CAS#
ODT
WE#
CKE
CK#
CS#
CK
18
Address
register
registers
Mode
Control
logic
18
counter
Refresh
15
The DDR2 SDRAM is a high-speed CMOS, dynamic random access memory. It is inter-
nally configured as a multibank DRAM.
11
3
15
address
2
Row-
MUX
control
15
Bank
logic
Column-
counter/
address
latch
decoder
address
Bank 0
latch
row-
and
Bank 1
Bank 2
Bank 3
9
2
Bank 4
32,768
Bank 5
Bank 6
Bank 7
DM mask logic
(32,768 x 512 x 16)
I/O gating
Sense amplifiers
Memory array
Column
decoder
8,192
(x16)
512
Bank 0
Bank 1
Bank 2
Bank 3
Bank 4
Bank 5
Bank 6
12
Bank 7
COL0, COL1
CK, CK#
16
16
16
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Read
latch
CK out
drivers
Write
CK in
FIFO
and
4
4
4
4
Mask
Data
COL0, COL1
4
16
MUX
2Gb: x4, x8, x16 DDR2 SDRAM
generator
1
1
1
4
4
4
4
1
DQS
registers
Input
DATA
Functional Block Diagrams
4
DQS, DQS#
1
1
1
4
4
4
4
1
2
CK, CK#
4
1
DRVRS
2
DLL
RCVRS
© 2006 Micron Technology, Inc. All rights reserved.
sw1 sw2
sw1 sw2
sw1 sw2
sw1 sw2
R1
R1
R1
R1
R1
R1
ODT control
R2
R2
R2
R2
R2
R2
V
ss
Q
sw3
sw3
sw3
sw3
R3
R3
R3
R3
R3
R3
V
dd
Q
DQ0–DQ3
DQS, DQS#
DM